Compound buried layer SOI high voltage device with a step buried oxide

王元刚,; 罗小蓉,; 葛锐,; 吴丽娟,; 陈曦,; 姚国亮,; 雷天飞,; 王琦,; 范杰,; 胡夏融,

doi:10.1088/1674-1056/20/7/077304

Cited by 12 publications

(8 citation statements)

References 12 publications

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“…In the 𝑦-direction, the holes on the buried oxide enhance the E-field strength like in Ref. [11]. This clarifies the advantages of the oxide trench in improving the E-field strength to realize a high BV.…”

Section: -2supporting

confidence: 60%

Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate

Wang

Zhang

et al. 2015

Chinese Phys. Lett.

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An ultralow specific on-resistance (𝑅on,sp) trench metal-oxide-semiconductor field effect transistor (MOSFET) with an improved off-state breakdown voltage (BV) is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region (UG MOSFET). In the on-state, the U-shaped gate induces a high density electron accumulation layer along its sidewall, which provides a low-resistance current path from the source to the drain, realizing an ultralow 𝑅on,sp. The value of 𝑅on,sp is almost independent of the drift doping concentration, and thus the UG MOSFET breaks through the contradiction relationship between 𝑅on,sp and the off-state BV. Moreover, the oxide trench folds the drift region, enabling the UG MOSFET to support a high BV with a shortened cell pitch. The UG MOSFET achieves an 𝑅on,sp of 2 mΩ•cm 2 and an improved BV of 216 V, superior to the best existing state-of-the-art transistors at the same BV level.

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Section: -2supporting

confidence: 60%

Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate

Wang

Zhang

et al. 2015

Chinese Phys. Lett.

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“…The above results suggest that, in order to ensure that the resistor behaves robustly in the circuits, the study on the breakdown voltage of the resistor with different sizes is required. Besides, the voltage stress should be a necessary item for the reliability evaluation including both self-heating and electromigration effects of polysilicon resistors [12][13][14][15][16].…”

Section: Reliability Behaviors Of Polysilicon Resistorsmentioning

confidence: 99%

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

Tang

Dong²

2015

Advances in Condensed Matter Physics

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With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

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“…Equation (11) shows that the surface electric field of a TSL LVD device with MSFP is proportional to the slope of the doping concentration. This is the reason why the TSL structure is doped with LVD.…”

Section: Structure and Mechanismmentioning

confidence: 99%

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

Qiao¹,

Zhuang²,

Wu³

et al. 2012

Chinese Phys. B

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Based on the theoretical and experimental investigation of a thin silicon layer (TSL) with linear variable doping (LVD) and further research on the TSL LVD with a multiple step field plate (MSFP), a breakdown voltage (BV) model is proposed and experimentally verified in this paper. With the two-dimensional Poisson equation of the silicon on insulator (SOI) device, the lateral electric field in drift region of the thin silicon layer is assumed to be constant. For the SOI device with LVD in the thin silicon layer, the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field (ENDIF), from which the reduced surface field (RESURF) condition is deduced. The drain in the centre of the device has a good self-isolation effect, but the problem of the high voltage interconnection (HVI) line will become serious. The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device. Based on this model, the TSL LVD SOI n-channel lateral double-diffused MOSFET (nLDMOS) with MSFP is realized. The experimental breakdown voltage (BV) and specific on-resistance (Ron,sp) of the TSL LVD SOI device are 694 V and 21.3 Ω-mm2 with a drift region length of 60 μm, buried oxide layer of 3 μm, and silicon layer of 0.15 μm, respectively.

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Compound buried layer SOI high voltage device with a step buried oxide

Abstract: Wang Yuan-Gang( ), Luo Xiao-Rong( ) † , Ge Rui( ), Wu Li-Juan( ), Chen Xi( ), Yao Guo-Liang( ), Lei Tian-Fei( ), Wang Qi( ), Fan Jie( ), and Hu Xia-Rong( )

Cited by 12 publications

References 12 publications

Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate

Ultralow Specific on-Resistance Trench MOSFET with a U-Shaped Extended Gate

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

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