Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence

Abstract

A new tracking detector, scintillating track image camera (SCITIC) was used for hyperon-scattering experiments. Since the hyperon lifetimes are short, the low-energy hyperon-nucleon scattering can be studied only with a track detector used as an active target. The present experiment has shown that the SCITIC is a promising detector for the hyperon scattering experiments. Polarized hyperons AE þ were produced through pð þ ; K þ ÞAE þ reactions with a 1.6 GeV/c pion beam on a liquid scintillator of the active target. Three sets of SCITIC were used to record the pictures of AE þ production and scattering. A kaon spectrometer was used to trigger the SCITIC with a signal of kaon from the reaction. Left/right asymmetries of the AE þ p scattering were determined through analyses of the pictorial data, and the results were in accordance with a quark-model prediction that the asymmetry was large in the AE þ p scattering while it was small in the ÃN case.

Energy level(s) of the dissociation product of the 1.014 eV photoluminescence copper center in n-type silicon determined by photoluminescence and deep-level transient spectroscopy

“…5. Changes in PL intensity of the Cu PL center (a) and concentrations of dominant DLTS peaks (b) with annealing temperature for the samples diffused with copper at 600 C. both centers presented in earlier experimental papers [7][8][9][10][11][14][15][16]20 and in this paper.…”

“…The trends of the intensity variation of the center with annealing temperature are fundamentally the same for both unetched and etched samples; the intensity begins to decrease at around 250 C, reaches a minimum between 300 and 550 C, and almost recovers at 600 C, with the same trend as the Cu DLB center in p-type samples. 10 The intensity change of the Cu PL center by the annealing is given by the transformation reaction between the centers as 14,20 Cu PL ð¼ Cu DLB Þ ! Cu DLA þ 3Cu i ; (1) in which Cu i is an interstitial copper atom.…”

“…9 The other center, denoted as the Cu DLA center and characterized by two energy levels of E v þ 0.21 (donor) and E v þ 0.42 eV (acceptor), was observed by annealing copper-diffused samples 8 and was demonstrated to be the dissociation product of the Cu DLB center. 10,11 Although there have been a considerable number of PL and DLTS observations of the aforementioned copper centers in p-type silicon, [3][4][5][6][7][8][9][10][11][12] little consensus on the structures of the centers is obtained yet. 13,14 One of the reasons for this is the lack of the determination of the explicit energy level (or levels) of the Cu DLA center in ntype silicon.…”

Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study

“…Note that the dissociation energy obtained from the analysis of the PL annealing in another study gave a 0.63-eV activation energy 28 and the formation of the Cu PL center was estimated to be 0.57 eV based on an analysis of the PL intensity. 28,29 (6) The Cu PL defect dissociates following a 30-min anneal at 250 • C, and the amplitude of the DLTS peaks associated with Cu s increases. 30,31 If Cu is reintroduced into the sample, Cu PL reappears.…”

Revisiting the stable structure of the Cu$_{4}$ complex in silicon

“…Although interstitial Cu (i) donates an electron, it is electronically inactive in the sense that no gap state is observed. However, many electronic signatures attributed to Cu defects have been found in a variety of measurements such as DLTS, [6][7][8][9][10][11][12] photoluminescence (PL), 13 EPR, 14 photocurrent-induced DLTS, 8 Laplace-DLTS, 15 IR spectroscopy, 16 and others. [17][18][19][20][21] This indicates that there are many ways of incorporating a Cu atom in the host crystal.…”