Compositional non-uniformities in selective area growth of GaInAs on InP grown by OMVPE

Material quality improvements of ultra-broadband gain materials grown by selective-area-growth techniques

“…The growth-rate enhancement, material composition and photoluminescence (PL) wavelength shift as a function of the oxide mask orientation, size, and separation have been studied extensively [1][2][3][4]. Due to the difference of vapor phase diffusion length and surface migration length of group III species, the material in the SAG region becomes indium rich and its PL shifts to longer wavelengths compared with that in the non-masked regions [5][6][7][8][9]. With an increasing compressive strain caused by material composition changes, the grown material quality will degrade.…”

Bridge Mask Growth Using Organomtallic Vapor Phase Epitaxy

“…In the case of the MQWs, a decrease in well thickness induces a blue shift in wavelength caused by the quantum well size effect. 5,7,9) By simple calculations, without the strain effect and compositional change, we found that the growth rate change at the fill factor of 0.5 leads to a PL wavelength shift of 45 nm (from 1.351 to 1.306 mm). In this case, we use the growth rate decrease of 0.78 obtained using the aforementioned parameters for the well band gap and thickness.…”

“…The compositional change induced by the lateral diffusion of molecules might be responsible for this small difference. 5,7,9) Figure 5 shows the PL wavelength transition around the BMG pattern edge along the trench direction, with the measurement direction displayed in the inset. Although our measurements were carried out for a pattern of W m ¼ 2 mm and W g ¼ 2 mm after removing the SiN x bridges, the shape of the bridges is depicted for easy understanding.…”

Design of high-quality reflectors for vertical III–V nanowire lasers on Si

“…However, when growing III-V thin-film components onto silicon, it is difficult to balance crystal quality, uniformity and area of selective growth, due to the large lattice, thermal properties, and atomic polarity differences. [8][9][10] When in the form of NWs, high-quality III-V materials can be monolithically grown on a Si platform. [11][12][13] This enables the fabrication of highquality photonics light sources for low-cost, ultra-high density integration on Si, solving one of the major challenges that have been limiting the Si photonics.…”