Composition uniformity of site-controlled InAs/GaAs quantum dots

Biasiol, G.; Baranwal, Vikas; Heun, S.; Prasciolu, Mauro; Tormen, Massimo; Locatelli, Andrea; Menteş, Tevfik Onur; Niño, M. Á.; Sorba, L.

doi:10.1016/j.jcrysgro.2010.10.155

Cited by 6 publications

(7 citation statements)

References 14 publications

(22 reference statements)

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“…For both systems the first monolayer (ML) of the epilayer sticks very strongly to the substrate surface [54,76] and the surface energy decreases with increasing WL thickness. This dependence of the surface energy on the WL thickness is in both material systems the reason for the formation of an In-rich [71] and a Ge-rich [77] WL which grows to an overcritical thickness (about one extra ML) [51,52,78]. The extra material stored in this metastable WL is used to form the initial islands, which are large dome islands [2,51,52].…”

Section: Comparison To the Inas/gaas Systemmentioning

confidence: 95%

“…As for Ge islands on Si substrates , also InAs dot site control was achieved on pit-patterned GaAs(001) substrates [66][67][68][69][70][71][72][73][74]. Many of the aspects of ordered Ge/Si island growth described in this work can also be helpful when applied to other material systems such as, for example, the InAs/GaAs system.…”

Section: Comparison To the Inas/gaas Systemmentioning

confidence: 99%

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Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

et al. 2013

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We identify the most important parameters for the growth of ordered SiGe islands on pit-patterned Si(001) substrates. From a multi-dimensional parameter space we link individual contributions to isolate their influence on ordered island growth. This includes the influences of: the pit size, pit depth and pit period on the Si buffer layer and subsequent Ge growth; the pit sidewall inclination on Ge island growth; the amount of Ge on island morphologies as well as the influences of the pit-size homogeneity, the pit period, the Ge growth temperature and rate on island formation. We highlight that the initial pit shape and pit size in combination with the growth conditions of the Si buffer layer should be adjusted to provide suitable preconditions for the growth of Ge islands with the desired size, composition and nucleation position. Furthermore, we demonstrate that the wetting layer between pits can play the role of a stabilizer that inhibits shape transformations of ordered islands. Thus, dislocation formation within islands can be delayed, uniform arrays of one island type can be fabricated and secondary island nucleation between pits can be impeded. These findings allow us to fabricate perfectly ordered and homogeneous Ge islands on one and the same sample, even if the pit period is varied from a few hundred nanometres to several micrometres.

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Section: Comparison To the Inas/gaas Systemmentioning

confidence: 95%

Section: Comparison To the Inas/gaas Systemmentioning

confidence: 99%

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

et al. 2013

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“…by forcing the nucleation of the Al-droplets on a lattice -then a spectrally narrow wavelength distribution of the QD-ensemble can potentially be engineered. This idea has been successfully applied to stacked QDlayers and QDs in pyramidal nanostructures [72][73][74][75][76][77][78] . For the system investigated here, Fig.…”

Section: Conclusion -We Show How the Optical Properties Ofmentioning

confidence: 99%

Correlations between optical properties and Voronoi-cell area of quantum dots

et al. 2019

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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over µm-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved. arXiv:1902.10145v3 [cond-mat.mes-hall]

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“…Therefore, it is very necessary to obtain the exact equilibrium composition profiles. 17 In experiment, cross-section scanning tunneling microcopy (STM) or transmission electron microscopy (TEM) have been used to determine the composition profiles of the InGaAs/GaAs QDs. [18][19][20] 22 Little attention has been paid on the surface morphology of InGaAs/GaAs QDs for the limited morphologic information due to their nanometric size.…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of InGaAs/GaAs quantum dots with tunable aspect-ratio

et al. 2014

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In this paper, a combined approach of finite element method (FEM) and quadratic programming optimization method is proposed to investigate the nonuniform equilibrium composition profile of InGaAs/GaAs quantum dots (QDs) in the framework of Gibbs energy optimization (GEO). The proposed QDs are varied with aspect ratio from 0.3 to 0.5. The wave functions of electron and heavy hole are predicted by using the k · p method. The changes of wave functions before and after optimization can be observed by using composition optimization. Both the eigenvalues and transition energy change obviously with the increasing aspect ratio. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The numerical results reveal that the aspect ratio and composition profile play significant roles in determining the electronic and optical properties.

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Composition uniformity of site-controlled InAs/GaAs quantum dots

Cited by 6 publications

References 14 publications

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

Correlations between optical properties and Voronoi-cell area of quantum dots

Electronic and optical properties of InGaAs/GaAs quantum dots with tunable aspect-ratio

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