Abstract:In this study, we report the indium incorporation efficiency and structural quality of nonpolar (101̅ 0) and semipolar (202̅ 1) InAlN layers grown by plasma-assisted molecular beam epitaxy. The indium content is found to depend on surface orientation, and it is 5.7% for the nonpolar m-plane, 16.2% for semipolar, and 17.4% for c-plane (0001); this results in the indium incorporation efficiency trend (101̅ 0) ≪ (202̅ 1) < (0001). One-dimensional strain relaxation is observed for the m-plane InAlN layer, while th… Show more
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