Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells

Aho, Arto; Polojärvi, Ville; Korpijärvi, Ville-Markus; Salmi, Joel; Tukiainen, Antti; Laukkanen, P.; Guina, Mircea

doi:10.1016/j.solmat.2014.01.044

Cited by 50 publications

(33 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Detailed description for the fabrication process can be found elsewhere [4,5]. Subsequent to the growth, the wafer was processed into 4x4 mm 2 solar cells.…”

Section: Methodsmentioning

confidence: 99%

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

et al. 2017

Self Cite

View full text Add to dashboard Cite

Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm 2 /°C while the corresponding slope for the open circuit voltage was -6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

show abstract

“…Detailed description for the fabrication process can be found elsewhere [4,5]. Subsequent to the growth, the wafer was processed into 4x4 mm 2 solar cells.…”

Section: Methodsmentioning

confidence: 99%

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…The reference sample was e-beam coated with a TiO 2 /SiO 2 ARC. Details of the MJSC growth and the moth eye ARC fabrication have been reported elsewhere [3,4,13]. Ni/Ge/Au contact fingers and the Ti/Au back contact were deposited by e-beam evaporation on the n-side and p-side, respectively.…”

Section: Methodsmentioning

confidence: 99%

Moth eye antireflection coated GaInP/GaAs/GaInNAs solar cell

Aho¹,

Tommila²,

Tukiainen³

et al. 2014

AIP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

“…The structure was finalized by growing window and contact layers that were used as transfer interface for the MOCVD process. Additional details of the epitaxy of the InGaNAs sub-cells can be found elsewhere [4], [6][7]. After the MBE growth the substrates were transferred to the MOCVD system using a packaging procedure properly defined to reduce the possibility for contamination of the overgrowth interface.…”

Section: Manufacturingmentioning

confidence: 99%

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

et al. 2017

Self Cite

View full text Add to dashboard Cite

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

show abstract

Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells

Cited by 50 publications

References 39 publications

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Moth eye antireflection coated GaInP/GaAs/GaInNAs solar cell

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

Contact Info

Product

Resources

About