Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes

Ikeno, Daisuke; Furumai, Kouhei; Kondo, Hiroki; Sakashita, Mitsuo; Sakai, Akira; Ogawa, Masahiro; Zaima, Shigeaki

doi:10.7567/ssdm.2006.p-1-21

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 2006

DOI: 10.7567/ssdm.2006.p-1-21

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Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes

Daisuke Ikeno¹,

Kouhei Furumai²,

Hiroki Kondo³

et al.

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2008

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P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Lee

Tan

Lim

et al. 2008

IEEE Electron Device Lett.

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We report the integration of nickel platinum germanosilicide (Ni 1−y Pt y SiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni 1−y Pt y SiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni 1−y Pt y SiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Φ P B ) among the Ni 1−y Pt y SiGe candidates evaluated. The low Φ P B (0.309 eV) provides a 15% reduction in series resistance R series . With a superior morphological stability and reduced R series , FinFETs integrated with Ni 0.90 Pt 0.10 SiGe contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.

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P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Lee

Tan

Lim

et al. 2008

IEEE Electron Device Lett.

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Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes

Cited by 1 publication

References 0 publications

P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

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