Composition and tribological characterization of chemically vapour-deposited TiN layer

Fouilland, Laurence; Imhoff, L.; Bouteville, A.; Benayoun, Stéphane; Remy, Jean; Perrière, J.; Morcrette, Mathieu

doi:10.1016/s0257-8972(97)00604-x

Cited by 12 publications

(10 citation statements)

References 6 publications

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“…The latter friction coefficient is normally observed for the Si/ruby pair. [19] Profilometry measurements confirmed that the depth of the wear track is superior to the TiN layer thickness. For the TiN/steel pair, the friction coefficient is higher (about 0.8).…”

Section: Applicationsmentioning

confidence: 71%

Optimization of Titanium Nitride Rapid Thermal CVD Process

Baynast

Bouteville

Remy

2000

Chem. Vap. Deposition

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Anomalous behavior during TiN growth through rapid thermal low-pressure chemical vapor deposition (RTLPCVD) from gas phase TiCl 4 ±NH 3 ±H 2 has been observed. Two deposition temperatures are used (500 C and 800 C) and two types of deposition process are defined (a long one-step process, and a multiple-step process). Resistivity, structure, composition, and growth behavior are examined and discussed in terms of oxygen contamination and classical nucleation theory. The long onestep process is better for mechanical applications, whereas the multiple-step process is more suitable for microelectronics.

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Section: Applicationsmentioning

confidence: 71%

Optimization of Titanium Nitride Rapid Thermal CVD Process

Baynast

Bouteville

Remy

2000

Chem. Vap. Deposition

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“…A clear evidence of Ge undercut below the TiN layer was observed by the suspended catalyst layer due to the its large Young's module. [24] This indicates that unlike the case of Si Mac-Etch in which etching behavior differs using TiN and Au, etching behaviors of Ge catalyzed by TiN and Au are both i-MacEtch where anisotropic etching happens first in areas not covered by catalyst and lateral undercut leads to enlargement of exposed Ge surface. [9] Figure 2d and e show the top and cross-sectional SEM images of the well-ordered v-groove array, respectively, fabricated by 120 min MacEtch.…”

Section: Resultsmentioning

confidence: 98%

“…[8] Application of MacEtch as inverse-MacEtch (i-MacEtch) [23] since adhesion of TiN to Si substrate is much stronger than noble metals like Au and Ag. [24] This puts forward difficulties for forward MacEtch where the catalyst sinks down while etching occurs. [22] However, Ge MacEtch is intrinsically i-MacEtch, [9] which indicates that the usage of TiN might even boost the mass transport and the etching outside TiN covered area.…”

Section: Introductionmentioning

confidence: 99%

Producing Microscale Ge Textures via Titanium Nitride‐ and Nickel‐Assisted Chemical Etching with CMOS‐Compatibility

Liao

Shin

Jin

et al. 2021

Adv Materials Inter

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on Ge has been explored as a promising alternative to traditional etching techniques. For example, Kim et al. [9] employed a thin Au layer as catalyst to realize pyramidal and indentation antireflection textures on Ge which contributed to enhance responsivity of near infrared (NIR) photodetectors. Lee et al. [10] coated a thin Ag layer on Ge and realized the formation of random antireflection structures by MacEtching in H 2 O 2 /HF/AgNO 3 solution. Shin et al. [11] also fabricated Ge nano-cone array using a thin Ag catalyst layer, followed by MacEtching in HF/H 2 O 2 .It should be emphasized that metal catalyst layer such as widely-used Au and Ag plays a crucial role for the MacEtch process of Ge, since it catalyzes the reduction of oxidant in the solution (normally H 2 O 2 and KMnO 4 ) to generate holes for subsequent etching. Although MacEtch of Ge based on those noble metal catalysts has been well explored, the usage of those noble metals is still a major drawback for the integration of Ge MacEtch in the current industrial front and back end of the line in the complementary metal oxide semiconductor (CMOS) fabrication process because deep-level defects are generated by non-CMOS compatible metals. [12][13][14] Many researchers have delved into the uncharted territory in order to identify the suitable CMOS-compatible catalyst for Ge MacEtch. For example, Li et al. [15] investigated the formation of Ge nanostructures by wet etching assisted by graphene. Nakade et al. [16,17] employed reduced graphene oxide to boost Ge wet etching in water. However, graphene-and graphene oxide-assisted chemical etching of Ge suffer from low etch rate (20-30 nm h −1 even when heated up) and poor morphologies, which make it unsuitable for mass production of uniform nanostructures. Therefore, it is worthwhile to explore novel etching catalysts with high efficiency and CMOS-compatibility.Titanium nitride (TiN) is widely used in CMOS process as local interconnects and barrier layers because it is chemically stable, [18] highly conductive, and has a work function of 4.5 eV. [19] These properties make it also suitable as the catalyst which can boost various chemical reactions. [20,21] As the pioneering work employing TiN as catalyst in wet etching, Kim et al. [22] have proven its effectiveness in the fabrication of highly ordered Si nanopillars. However, etching characteristic of TiN-MacEtch is different when compared with typical Au-MacEtch. Mass transport underneath the TiN is significantly limited due to its strong adhesion, leading to etching in area not covered by TiN, similar As an emerging anisotropic wet etching technique, metal-assisted chemical etching (MacEtch) has been widely employed for fabricating nano-and micro-structures of germanium (Ge) for potential infrared (IR) photonics and optoelectronics. However, traditional noble metal catalysts such as Au and Ag limit its application in complementary metal oxide semiconductor (CMOS) processes, as Au is considered as a detrimental deep-level impurity in Ge. In this work, the fe...

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“…As for TiN, it has high melting point (3160-3250 °C), high hardness (2500-3000 HV), thermal and chemical stability, wear and corrosion resistance, and some metallic properties, such as low coefficient of friction and high thermal and electrical conductivity. Due to the presence of those properties, there is a great applicability of this technology in microelectronics 6,7 . The similarity of TiN in color with yellow gold is considered an important quality already explored in the watchmaking industry 8 .…”

Section: Introductionmentioning

confidence: 99%

Investigation of FeN and TiN thin films properties for possible application in electronic devices

Carvalho¹,

Neto²,

Júnior³

et al. 2019

RBAV

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In the present work, thin films of FeN (Iron Nitride) and TiN (Titanium Nitride) were deposited in samples of laminated glass by cathodic cage deposition technique using stainless steel and titanium cages, respectively. Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Wettability and Electrical Conductivity techniques were used to characterize the samples. To obtain the electrical conductivity values, the electrical resistivity (also known as specific electrical resistance) was calculated. In this way, the lower the resistivity, the easier is the passage of an electric charge through the material. To this purpose, it was used the four-point probes method. FeN film presented hydrophobic surface, and TiN film hydrophilic surface.Both films were promising in electrical conductivity analysis. The results show promise applications in the electronic devices.

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Composition and tribological characterization of chemically vapour-deposited TiN layer

Cited by 12 publications

References 6 publications

Optimization of Titanium Nitride Rapid Thermal CVD Process

Optimization of Titanium Nitride Rapid Thermal CVD Process

Producing Microscale Ge Textures via Titanium Nitride‐ and Nickel‐Assisted Chemical Etching with CMOS‐Compatibility

Investigation of FeN and TiN thin films properties for possible application in electronic devices

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