Optimization of Titanium Nitride Rapid Thermal CVD Process

Baynast, Hélène de; Bouteville, A.; Remy, Jean

doi:10.1002/(sici)1521-3862(200006)6:3<115::aid-cvde115>3.0.co;2-g

Cited by 10 publications

(5 citation statements)

References 13 publications

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“…Barrier defects compromise the efficiency of insulating layers that are essential for maintaining electrical signal integrity, minimizing leakage, and reducing power consumption [4][5][6]. Titanium nitride (TiN) diffusion barriers have already been introduced in semiconductor manufacturing due to their material characteristics, such as high thermodynamic stability, corrosion resistance, and low electrical resistance [7][8][9][10][11][12][13]. However, depending on deposition conditions, they may exhibit high resistivity, posing potential reliability issues [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Influence of Flow Rates and Flow Times of Plasma-Enhanced Atomic Layer Deposition Purge Gas on TiN Thin Film Properties

Kang,

An,

Hong

2024

Coatings

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This study investigated the effect of purge gas flow rate and purge gas flow time on the properties of TiN thin films via chemical reaction simulation and the plasma-enhanced atomic layer deposition (PEALD) process along purge gas flow rates and time settings. Chemical reaction simulation unveiled an incremental increase in generating volatile products along purge gas flow rates. In contrast, increased purge gas flow times enhanced the desorption of physically adsorbed species flow time in the film surface. Subsequent thin film analysis showed that the increased Ar purge gas flow rate caused a shift of 44% in wafer non-uniformity, 46% in carbon composition, and 11% in oxygen composition in the deposited film. Modulations in the Ar purge gas flow time yielded variations of 50% in wafer non-uniformity, 46% in carbon composition, and 15% in oxygen content. Notably, 38% of the resistivity and 35% of the film thickness occurred due to experimental variations in the Ar purge step condition. Increased purge gas flow rates had a negligible impact on the film composition, thickness, and resistivity, but the film’s non-uniformity on a 6-inch wafer was notable. Extended purge gas flow times with inadequate flow rates resulted in undesired impurities in the thin film. This study employed a method that utilized reaction simulation to investigate the impact of purge gas flow and verified these results through film properties analysis. These findings can help in determining optimal purge conditions to achieve the desired film properties of PEALD-deposited TiN thin films.

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Section: Introductionmentioning

confidence: 99%

Influence of Flow Rates and Flow Times of Plasma-Enhanced Atomic Layer Deposition Purge Gas on TiN Thin Film Properties

Kang,

An,

Hong

2024

Coatings

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“…TiN barrier metal deposited with ALD has recently drawn attention owing to the transition of semiconductor integrated circuits into multilayer wiring structures due to the high integration of semiconductor devices. The TiN thin film, which has excellent material properties, is widely used as a diffusion barrier film in the wiring of Al and Cu because of its low resistivity, high melting point, thermal stability, and good adhesion in very large-scale integration (VLSI) [2,3]. Until now, the CVD method has been actively studied as a deposition method of TiN films.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition

et al. 2023

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In this study, the effect of deposition temperature of TiN thin films deposited using the thermal atomic layer deposition (ALD) method was investigated. TiCl4 precursor and NH3 reactive gas were used, and the deposition rate, resistivity change, and surface morphology characteristics were compared in the deposition temperature range of 400 °C–600°C. While resistivity decreased to 177 µΩcm as the deposition temperature increased to 600 °C, an increase in surface roughness (Rq) to 0.69 nm and a deterioration in the step coverage were identified. In order to obtain a high-quality TiN thin film with excellent resistivity and step coverage characteristics even at low deposition temperatures, the TiN thin film was post-treated with plasma in a combination of N2/He gas ratio of 3:2 to confirm the change in resistivity. X-ray diffraction analysis confirmed crystallization change in the TiN thin film caused by plasma energy. As a result, the resistivity of the TiN thin film deposited at 400 °C was confirmed to be lowered by about 25%.

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“…Titanium nitride (TiN) has gained considerable attention for the applications in diffusion barriers, metal gates in CMOS, protecting layers in tungsten CVD, and electrodes in DRAMs, owing to its chemical inertness, thermal stability, and low resistivity. − TiN films have especially been regarded as an electrode material of capacitors in the dynamic random access memory (DRAM) because of its low resistivity (13 μΩ·cm at 298 K), moderate work function, and high thermal stability. , For the application of electrode materials in next-generation DRAM capacitors having an extremely high aspect ratio, atomic layer deposition (ALD) is the only feasible deposition technique to grow the electrode films in the DRAM capacitors, owing to its highly conformal deposition characteristics. − …”

Section: Introductionmentioning

confidence: 99%

Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

Lee

Hwang

Park

et al. 2021

ACS Appl. Electron. Mater.

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Titanium nitride (TiN) thin films grown by atomic layer deposition (ALD) have attracted considerable attention as electrode materials in semiconductor device applications, such as logic transistors and dynamic random access memories (DRAMs). TiCl4 and NH3 are mostly used as the Ti precursor and nitrogen source for the TiN ALD process. Unfortunately, the resistivities of TiN films increase with decreasing ALD process temperature. The resistivity of TiN films especially increases substantially (>150 μΩ·cm) at an ALD process temperature lower than 400 °C because of the remaining Cl impurities (>3%) coming from the TiCl4 precursor. Consequently, a process temperature higher than 500 °C is necessary to achieve a low resistivity of the TiN film. In this study, we provide the first demonstration of a renovative ALD method to decrease the resistivity of TiN films via a novel ALD surface reaction pathway. As a result, a lower resistivity (<130 μΩ·cm) was obtained at the given ALD process temperature (∼<400 °C) compared to that of the conventional TiCl4 + NH3 ALD process. H2S was introduced after the TiCl4 pulse to form titanium sulfide, which was transformed to titanium nitride by the following NH3 gas. With the proposed reaction pathway, the resistivity of the TiN film was decreased by >20% at the given growth temperature compared to TiN films with the conventional TiCl4 + NH3 ALD process. Owing to the effect of H2S during the ALD surface reaction, the Cl impurity was reduced substantially (∼1%) in the TiN film, which eventually decreased the resistivity of the TiN film. The resistivity decrease of the TiN film can enable a reduction of power consumption in the DRAM operation, which offers an aggressive scaling of DRAM capacitors for high-density integration.

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Optimization of Titanium Nitride Rapid Thermal CVD Process

Cited by 10 publications

References 13 publications

Influence of Flow Rates and Flow Times of Plasma-Enhanced Atomic Layer Deposition Purge Gas on TiN Thin Film Properties

Influence of Flow Rates and Flow Times of Plasma-Enhanced Atomic Layer Deposition Purge Gas on TiN Thin Film Properties

The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition

Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

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