Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Abstract

This study provided a novel method for depositing high-quality GaO x N y film by plasma-enhanced atomic layer deposition (ALD). To obtain a uniform nitrogen and oxygen composition, O2 and NH3 were led into the ALD chamber at the same time. It was found that the growth rate, composition, and optical properties of the GaO x N y film could be precisely controlled by adjusting the O2:NH3 ratio. The energy band gap was well tuned from 3.46 to 4.78 eV with increased O2 ratios. The detailed analysis of the X-ray photoelectron spectra proved the existence of Ga–O, Ga–N, and N–Ga–O bonds in prepared GaO x N y film. The surface, interface, and construction of the GaO x N y films were different with GaN and Ga2O3 films through transmission electron microscope characterization. Then a possible growth mechanism was demonstrated based on these findings. The energy band structure of all GaO x N y films deposited in this study was obtained from a detailed analysis of the valence band spectra. Importantly, the GaO x N y was found to exhibit lower leakage current and higher breakdown voltage than both GaN and Ga2O3. These findings offered a foundation and proved this material will present brilliant application prospects in photodetection, photoelectrochemical water splitting, and high-voltage devices.

Synthesis of Narrow-Band-Gap GaN:ZnO Solid Solution for Photocatalytic Overall Water Splitting

“…Regarding the surface elements determined by XPS, there was a minor shift of all peaks to higher binding energy when the nitridation time was increased. This phenomenon was supposed to have arisen from the continuous shift of the VBM of GaN:ZnO toward a more positive position as a result of the weakening p–d repulsion. , …”

“…This phenomenon was supposed to have arisen from the continuous shift of the VBM of GaN:ZnO toward a more positive position as a result of the weakening p−d repulsion. 19,37 The GaN:ZnO samples prepared with different nitridation times were subjected to photocatalytic water splitting reactions under visible-light irradiation (Figures 3d−f and S15). The dependence of gas production rates on calcination duration showed volcano curves for HER, OER, and overall water splitting reaction.…”

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

“…Figure 7 b displays the variation of the valence band spectra between −4 and 15 eV for the Ga 2 O 3 film as a function of the Sn ratio. The VBM was determined by the tangent method [ 24 ]. The minimum value of VBM, E V , is positioned at 2.64 eV for the pure Ga 2 O 3 film.…”

“…Additionally, the mechanism describing the influence of doping on the film properties remains unclear. Furthermore, although there have been many studies on the growth of undoped Ga 2 O 3 film using atomic layer deposition (ALD) [ 22 , 23 ], few researchers have reported on the precise doping of Ga 2 O 3 film via ALD [ 15 , 24 ].…”

Spectrum projection with a bandgap-gradient perovskite cell for colour perception

“…x Se 1−x (1.7-2.4 eV)), multiple device configurations (including semiconductor films with vertical bandgap-gradient distributions, conducting films blended with bandgap-gradient semiconductor nanoparticles, and semiconductor nanowires with axial GBGs) and different fabrication technologies 14,15,[39][40][41][42] , which can lead to a variety of device characteristics. For instance, arrays of devices with high photon energy responsivity can be obtained by using conducting films blended with bandgap-gradient CsPbX 3 quantum dots 43 .…”