Composition and optoelectrical properties of sputtering MoSex films

Li, N.; Liu, Z.-T.; Feng, Li; Jia, Rundong

doi:10.1179/1743294415y.0000000081

Cited by 3 publications

(2 citation statements)

References 36 publications

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“…There are distinct techniques for the surface growth of the silver thin films, which include sol‐gel, molecular‐beam epitaxy, physical or chemical vapor deposition, electrodeposition, and sputtering. ()…”

Section: Introductionmentioning

confidence: 99%

Theoretical and experimental analyses of the deposited silver thin films

Abdolvahab

Zamani-Meymian

2018

Surface & Interface Analysis

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The silver thin films have been prepared using magnetron DC‐sputtering. We discuss in detail the thin films AFM images and their properties in different sputtering times of 2 to 6 minutes. Despite the low thickness of the films, the roughness saturation amounts, Ws, are well separated. The surface data do not follow the normal Family‐Vicsek scaling, and we have the local growth exponent, β(Ws(t)∼tβ). We obtained the global roughness scaling exponent α=0.36 and growth exponent, β=0.50. We also obtain the fractal spectrum of the data, f(α). The results show that the spectrum is right‐hook like. It distinguishes between different film thicknesses even in small sizes of hundreds of nanometers. Furthermore, we measure the surface conductivities and compare them to the thin film roughnesses. We investigate the roughness and fractality of the AFM data, looking for their relations to width and conductivity of the silver thin film samples.

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Section: Introductionmentioning

confidence: 99%

Theoretical and experimental analyses of the deposited silver thin films

Abdolvahab

Zamani-Meymian

2018

Surface & Interface Analysis

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“…Silica thin films have been extensively grown by the OAD technique using evaporation, but much work has not yet been done using sputtering. Sputtering is one kind of physical vapour deposition process primarily used for the deposition of a large range of materials for varied applications [7][8][9][10][11]. Some of the striking advantages of the sputtering process over evaporation are better uniformity, homogeneity and adhesion with the substrate of the deposited films.…”

Section: Introductionmentioning

confidence: 99%

Factors influencing the nanostructure of obliquely deposited thin films

Sarkar

Pradhan

Jeevitha

2018

Surface Engineering

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In this piece of work, silica thin films were deposited by RF magnetron reactive sputtering exploiting the mechanism of oblique angle deposition. Here, change in the structure of the films with a change in the oblique angle of deposition and target to substrate distance has been studied with some emphasis on the role of the atomic weight of silicon in influencing the collisional process and directionality of the sputtered atoms. The films deposited at a lower target to substrate distance are compact and possess a columnar structure when deposited at higher oblique angles. The films deposited at higher target to substrate distance do not show any change in the tilt angle of the nanocolumnar structure with change in the oblique angle of deposition. This shows that the mean free path of the sputtered atoms plays a major role in the evolution of the structures of the thin films.

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Influence of selenization temperature on structure and optical band gap of MoSe2 thin film

Wu,

Tao,

et al. 2024

Acta Phys. Sin.

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In recent years, MoSe2, as a kind of transition metal dichalcogenide, has aroused widespread research interest due to its special crystal structure with different electrical and optical properties. The band gap of molybdenum diselenide can be manipulated by different layers, strain engineering, doping, or the formation of heterostructures, which makes it potential advantages in optoelectronic devices and photovoltaic applications. In this work, we investigate the influence of selenization temperature on the structures and optical properties of the MoSe2 films. Molybdenum (Mo) thin films are prepared by RF magnetron sputtering, and then MoSe2 thin films are generated by selenization annealing. The surface morphology, crystal structure, and optical bandgap for each of the MoSe2 thin films are characterized and analyzed by using scanning electron microscopy, X-ray diffraction, and ultraviolet visible spectroscopy, respectively. The results show that the crystal structures of the MoSe2 thin films are closely related to the selenization temperature (Ts): with the increase of selenization temperature, the average grain size in the thin film decreases slightly and then increases rapidly from 24.82 nm to 55.76 nm. Meanwhile, the (002) crystal plane of MoSe2 also exhibits preferential growth with temperature increasing. Each MoSe2 thin film has a low absorption rate for short-wavelength light (around 600 nm). With the increase of selenization temperature, the bandgap waves of the MoSe2 thin films are blue-shifted, and the optical bandgaps decrease, which is attributed to the fact that different selenization temperatures cause the lattice size of MoSe2 to change, thereby affecting the spatial expansion of its electronic wave function. In addition, the structure and optical bandgap of MoSe2 can be effectively controlled by changing the selenization temperature, which provides more possibilities for the applications of the MoSe2 thin films in optical devices.

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Composition and optoelectrical properties of sputtering MoSe_x films

Cited by 3 publications

References 36 publications

Theoretical and experimental analyses of the deposited silver thin films

Theoretical and experimental analyses of the deposited silver thin films

Factors influencing the nanostructure of obliquely deposited thin films

Influence of selenization temperature on structure and optical band gap of MoSe<sub>2</sub> thin film

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