2010
DOI: 10.1016/j.jcrysgro.2010.01.044
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Composition and dissociation processes analysis in crystal growth of Nd:GGG by the Czochralski method

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Cited by 12 publications
(6 citation statements)
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“…The molten material crystallizes as it is removed from the heat, near the top of the liquid melt, ideally taking on the same crystallographic orientation as the seed that was used to begin the growth and forming a very large single crystalline domain, as shown in Figure b . This technique has also been used in the growth of laser materials and scintillators . The growth of single crystal silicon via the Czochralski method is one of the most important accomplishments in crystal growth in the modern era and showcases the usefulness of crystal seeding and directional control of the solidification front in the growth process .…”
Section: Key Crystal Growth Techniquesmentioning
confidence: 99%
“…The molten material crystallizes as it is removed from the heat, near the top of the liquid melt, ideally taking on the same crystallographic orientation as the seed that was used to begin the growth and forming a very large single crystalline domain, as shown in Figure b . This technique has also been used in the growth of laser materials and scintillators . The growth of single crystal silicon via the Czochralski method is one of the most important accomplishments in crystal growth in the modern era and showcases the usefulness of crystal seeding and directional control of the solidification front in the growth process .…”
Section: Key Crystal Growth Techniquesmentioning
confidence: 99%
“…Thus, the 1.3 µm passive Q-switched laser has immense application prospects in Figure 1. [9], SEM image of MoS 2 -SA [10], Photograph of gold nanobipyramids solution and TEM image of the gold nanobipyramids [11], Nd:YVO 4 crystals samples [12], Nd:YAG crystals samples [13], Nd:GGG crystals samples [14], Nd:KGW crystals 182W, respectively. In 2011 Li et al [32] realized passively Q-switched laser operation with a mixed c-cut Nd:Gd 0.33 Lu 0.33 Y 0.33 VO 4 crystal at 1.34 µm.…”
Section: Introductionmentioning
confidence: 99%
“…The relationship between the Reynolds number and the crystal diameter during crystal growth was analyzed, which shows that for a given crucible size under the same crystal growth conditions, the critical Reynolds number remains the same for any size of crystals. 11 The defects of the facet and core of Nd:GGG crystals, which can also be eliminated, were studied with a laser, a stress meter and a polarization microscope. 12 Many important practical observations were summarized in the description of the crystal growth of GGG, [13][14][15] however, it is still a huge challenge to grow bulk GGG single crystals with a low defect density.…”
Section: Introductionmentioning
confidence: 99%