Composite TiSi/sub 2//n+ Poly-Si Low-Resistivity Gate Electrode and Interconnect for VLSI Device Technology

Wang, K.L.; Holloway, T.C.; Pinizzotto, Russell F.; Sobczak, Z.P.; Hunter, W. R.; Tasch, A.F.

doi:10.1109/jssc.1982.1051713

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…Recently, diffusion of dopants from the doped silicide layer on Si into the Si substrate has been shown to be a very promising technique for the formation of silicided shallow junction with high surface carrier concentration at the silicide/Si interface (102)(103)(104). As compared with other methods, the doped silicide technique has these advantages: (i) the silicide layer is formed before junction formation, which produces the same silicide thickness on both n-and p-channel devices; (ii)junction depth is controlled by the drive-in annealing temperature and/or annealing cycle; and (iii) no implantation damage in the substrate is created.…”

Section: Boron Diffusion In Sioe/tisijsi Structure and Shallow P+-n J...mentioning

confidence: 99%

“…P-channel LDD MOSFETs with channel lengths of 1 ~m and with SALICIDE structures were fabricated and their electrical characteristics were studied. P-regions were im- (18,102), there is a n e w p h a s e (boron precipitation) t h a t c o n t i n u e s to grow at t h e S i O j TiSi2 interface as the a n n e a l i n g process proceeds. D u r i n g the g r o w t h of this n e w phase, m o r e a n d m o r e b o r o n was att r a c t e d to the SiOJTiSi2 interface.…”

Section: Boron Diffusion In Sioe/tisijsi Structure and Shallow P+-n J...mentioning

confidence: 99%

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The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Lee

Kwong

1990

J. Electrochem. Soc.

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In this paper we have developed a SALICIDE process for CMOS applications using ion beam mixing for silicide formation and doped silicide in conjunction with RTA drive-in for shallow silicided junction formation, and have investigated the fundamental issues related to this process. Specifically, we have studied (i) the effects of ion beam mixing and RTA on the properties of Ti SALICIDE and the interaction between Ti and SiO2; (ii) the self-aligned TiN~OJTiSi2 formation and phase transformation; (iii) the mechanism of impurity redistribution and segregation, and junction formation during RTA drive-in; and (iv) the performances and reliability of fabricated SALICIDE devices. Results show that this process may have a great impact on future VLSI technology.

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Section: Boron Diffusion In Sioe/tisijsi Structure and Shallow P+-n J...mentioning

confidence: 99%

Section: Boron Diffusion In Sioe/tisijsi Structure and Shallow P+-n J...mentioning

confidence: 99%

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Lee

Kwong

1990

J. Electrochem. Soc.

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“…Aside from applications as ohmic or Schottky contacts, high conductivity metal silicides were proposed in 1979 as contacts to doped polysilicon or polycide structure to reduce resistance and give extra interconnection capability [1]. In 1981, the concept was extended to diffusion areas by forming self-aligned silicide at both polysilicon and diffusion areas simultaneously for improving both contact and interconnects [2]. Silicide-related technologies have therefore become an integral part of submicron devices in recent years.…”

Section: Introductionmentioning

confidence: 99%

Improving the electrical integrity of Cu-CoSi/sub 2/ contacted n/sup +/p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier

Yang

You

et al. 2002

IEEE Trans. Electron Devices

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The study on improving the electrical integrity of Cu-CoSi 2 contacted-junction diodes by using the reactively sputtered TaN as a diffusion barrier is presented in this paper. In this study, the Cu(300 nm)-CoSi 2 (50 nm)/n + p junction diodes were intact with respect to metallurgical reaction up to a 350 C thermal annealing while the electrical characteristics started to degrade after annealing at 300 C in N 2 ambient for 30 min. With the addition of a 50-nm-thick TaN diffusion barrier between Cu and CoSi 2 , the junction diodes were able to sustain annealing up to 600 C without losing the basic integrity of the device characteristics, and no metallurgical reaction could be observed even after a 750 C annealing in furnace. In addition, the structure of TaN layers deposited on CoSi 2 at various nitrogen flow rates has been investigated. The TaN film with small grain sizes deposited at nitrogen flow ratios exceeding 10% shows better barrier capability against Cu diffusion than the others.

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Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure

Lee

Kwong

et al. 1989

Applied Physics Letters

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Composite TiSi/sub 2//n+ Poly-Si Low-Resistivity Gate Electrode and Interconnect for VLSI Device Technology

Cited by 4 publications

References 5 publications

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Improving the electrical integrity of Cu-CoSi/sub 2/ contacted n/sup +/p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier

Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure

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