Composite avalanche diode structures for increased power capability

Swan, C.B.; Misawa, T.; Marinaccio, L.P.

doi:10.1109/t-ed.1967.16007

Cited by 34 publications

(1 citation statement)

References 8 publications

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“…( 6) Diamond IIa The th erm al conductiv ity of diam ond I I a is reported to be approxim ately five tim es th a t of copper a t room tem p eratu re by B erm an (1965). However, as th e te m p eratu re increases, th e th erm al co n d uctivity decreases and is th o u g h t to be inversely proportional to th e tem p eratu re (Swan et at. 1967).…”

Section: Tr(rz)mentioning

confidence: 99%

Steady-state heat sink analysis for two-terminal microwave oscillator devices with temperature dependent thermal conductivity

1993

Proc. R. Soc. Lond. A

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A theoretical analysis to calculate the steady-state temperature distribution within a cylindrical heat sink configuration, where the thermal conductivity is dependent on the temperature, is outlined. The analysis applies to any heat sink arrangement that can be treated as one or more homogeneous solid cylinders mounted on a semi-infinite heat sink, where the heat flux incident on both faces of each cylinder is uniform over a given centralized circular region. The model is used to analyse the temperature distribution within the heat sink configurations used commonly to package two-terminal semiconductor devices that are operated as sources of electromagnetic radiation in microwave oscillators. Results are presented that show how the maximum temperature rise within commercially available heat sink packages, depends on the input heat flux and the dimensions and thermal conductivity of the materials. Furthermore, results that show how the temperature rise varies across the interfaces of given heat sink configurations, similar to those used commercially, are given also.

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Section: Tr(rz)mentioning

confidence: 99%

Steady-state heat sink analysis for two-terminal microwave oscillator devices with temperature dependent thermal conductivity

1993

Proc. R. Soc. Lond. A

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Reliability critical thermal model for double‐drift IMPATT diodes on diamond heat sinks

Csanky

1990

Quality & Reliability Eng

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A thermal model of double‐drift IMPATT diodes on diamond heat sinks has been developed. The thermal model approximates the temperature‐dependent thermal conductivities of Si and diamond (Type II) by means of simple empirical formulae. The application of the thermal model to three IMPATT diode lots indicates that under life test, junction temperatures are greater than 700°C, and that the metal/Si interface temperatures exceed 500°C. An explanation of the failure mechanism is presented. Designs that result in a lower junction temperature are proposed.

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Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices

Ghivela

2023

J Comput Electron

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Composite avalanche diode structures for increased power capability

Cited by 34 publications

References 8 publications

Steady-state heat sink analysis for two-terminal microwave oscillator devices with temperature dependent thermal conductivity

Steady-state heat sink analysis for two-terminal microwave oscillator devices with temperature dependent thermal conductivity

Reliability critical thermal model for double‐drift IMPATT diodes on diamond heat sinks

Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices

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