Comportement à deux modes de Ga(x)In(1 - x)P ? Diffusion Raman résonnante par les modes rendus actifs par le désordre

Abstract

2014 Une analyse critique des résultats déjà obtenus sur les propriétés vibratoires des alliages Ga(x)In(1-x)P jointe à une étude expérimentale des symétries et des résonances des structures Raman, au voisinage de E(0393), conduisent à la remise en cause du comportement à un mode des modes de grandes longueurs d'onde dans ce système. Abstract. 2014 A critical analysis of previous data on vibrational properties joined with our experimental studies of the symmetry and the resonance behaviour of Raman structures near the direct band gap lead to question the one-mode behaviour of the longwavelength optical modes.

Residual stress analysis of thin film photovoltaic cells subjected to massive micro-particle impact

“…Here, the partial two-mode behavior was adopted according to the study by Jusserand et al 35 The wave numbers of the scattering peaks were in a range from 300 cm À1 to 460 cm À1 , which could be classied into GaP-LO mode at 380.01 cm À1 , GaP-TO mode at 369.84 cm À1 , InP-LO mode at 359.49 cm À1 , InP-TO mode at 327.79 cm À1 and AlP-LO mode at 451.86 cm À1 , respectively. The wave numbers measured in the present work matched well with the study by Bedal et al 34 The lattice parameters of strained epilayer will deviate from the value of natural strain-free material. For an ideal strained epilayer on a (100) substrate, the mist strain can be dened 36 as…”

“…According to Bedel et al, 34 the tted value of composition of optic phonon frequencies can be tted as follows,…”

InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

“…The downward shift in phonon frequencies of ∼2-3 cm −1 may be attributed to the presence of higher In content in the alloy relative to the InGaP alloy lattice-matched to GaAs. In fact, our estimates of ∼329.6 cm −1 and ∼368.6 cm −1 for the two modes using the compositional dependence of phonons in InGaP are in very good agreement with observed values [27,28]. The direct bandgap E 0 of InGaP on Ge is now clearly observed in the visible-ultraviolet dielectric function.…”

“…cm -1 and ~ 368.6 cm -1 for the two modes using the compositional dependence of phonons in InGaP are in very good agreement with observed values. 27,28 The direct bandgap E0 of InGaP on Ge is now clearly observed in the visible-ultraviolet dielectric function. The near-infrared to ultraviolet dielectric function of In0.49Ga0.51P lattice-matched to GaAs (Ref.…”

Composition, Optical Resonances, and Doping of InP/InGaP Nanowires for Tandem Solar Cells: a Micro-Raman Analysis

“…In x Ga 1−x P (x ≈ 0.25) 25,32,33 348.2 394.1 376.4 In x Ga 1−x P (x ≈ 0.35) 25,32,33 340.9 measurements needs to be taken into account for the intensity analysis. According to the Abbe formula, the laser beam diameter at focus is ≈0.7 μm.…”