“…Porous semiconductors have attracted considerable attention for their potential applications in sensing, catalysis, and as templates for lattice-mismatched heteroepitaxy. − With controlled positioning of pores with diameters in the range of nanometers comes the promise of devices that manipulate ionic and molecular transport, , “nanocontainers” that can be employed in “smart” extraction and gene delivery systems, , and the assembly of “quantum fortresses” within semiconductors. , The III-nitrides are interesting materials for nanopore applications as they are mechanically robust and biologically compatible, as well as electrically and optically active . Nanopore structures have been previously fabricated within GaN by reactive ion etching (RIE) and inductively coupled plasma (ICP) etching, − anodization and wet chemical etching, , and growth of porous particles and nanowires. , Direct RIE and ICP etching of nanopores results in damaged surfaces, thus degrading the quality of electrically active interfaces. Chemical etching and anodization methods result in nanopores with variations in uniformity and little control over position.…”