Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

Chiaruttini, François; Guillet, Thierry; Brimont, Christelle; Scalbert, D.; Cronenberger, Steeve; Jouault, Benoît; Lefèbvre, Pierre; Damilano, B.; Vladimirova, Maria

doi:10.1103/physrevb.103.045308

Cited by 9 publications

(3 citation statements)

References 77 publications

(181 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electrons are pushed by this field towards the sample surface, while the holes move towards the substrate; this is the quantum-confined Stark effect 32 . As a consequence, in the zero-density limit, IX energy is as low as E 0 ≈ 3.3 eV, that is about 0.18 eV below GaN bandgap at 10 K. The corresponding radiative lifetime is in the order of microseconds, binding energy E b = 18.6 meV, and dipole length is close to the QW width 36,39,44 .…”

Section: (B)mentioning

confidence: 95%

“…Both energies and intensities are determined by fitting the phenomenological function, introduced in Ref. 44 and also reported in Appendix V, to the IX emission spectra. The data obtained at 3 different values of V b are presented.…”

Section: A General Operation Of the Electrostatic Trapmentioning

confidence: 99%

“…Here we use the value D = 0.4 cm 2 /s consistent with our previous work on the similar samples studied under similar conditions 39,44 .…”

Section: Drift-diffusion-losses Modeling Of the Bias-controlled IX Tr...mentioning

confidence: 99%

See 2 more Smart Citations

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

et al. 2022

Self Cite

View full text Add to dashboard Cite

A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.

show abstract

Section: (B)mentioning

confidence: 95%

Section: A General Operation Of the Electrostatic Trapmentioning

confidence: 99%

See 1 more Smart Citation

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Damilano,

Aristégui,

Teisseyre

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

GaN/AlxGa1−xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6–8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect due to the presence of the internal electric field which spatially separates the electron and hole wave functions. The growth conditions were optimized in view of minimizing the photoluminescence peak broadening. In particular, the impact of growth temperature (up to 900 °C) on the surface morphology, structural, and photoluminescence properties was studied. The diffusion of indirect excitons on the scale of tens of micrometers was measured with a micro-photoluminescence setup equipped with a spatially resolved detection. A dedicated model and its analysis allow us to extract from these measurements the exciton diffusion constant and to conclude on the optimum growth conditions for the GaN/AlxGa1−xN quantum well structures suited for studies of quantum collective effects in indirect exciton liquids.

show abstract

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

Aristegui,

Lefebvre,

Brimont

et al. 2023

Phys. Rev. B

View full text Add to dashboard Cite

HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

show abstract

Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

Cited by 9 publications

References 77 publications

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

Contact Info

Product

Resources

About