Complex‐valued equivalent circuits which represent the connection of wave functions at the heterointerfaces

Abstract

For the design of devices using the quantum effect, it is necessary to know the wavefunction of the electrons and holes in the quantum well and multiple barrier structures as well as the characteristic energy levels and resonance levels. It is necessary further to manipulate the potential structures to synthesize a desired phenomenon. to attain these objectives, applications of circuit theory to the analysis and design of quantum effect phenomena have been attempted. In this paper, it is shown that the 2 × 2 interface matrix representing the continuity of the wavefunction and the boundary condition on the wavefunction accompanied by the T‐X mixing are expressed in terms of the lossless two port and four port, respectively. By means of this procedure, it is now possible to carry out a circuit‐oriented treatment of the behaviors of the electrons and holes in the case of superlattices other than GaAs systems requiring the interface matrix and the case where mixing between the minimum points of the conduction band in GaAs/AlxGal ‐ xAs for which no circuit treatment was previously possible. They can now be analyzed systematically with the circuit functions and circuit matrices of the equivalent circuit without special boundary conditions. Also, by means of the proposed circuit representation, analysis examples are presented for the tunneling phenomena in these potential structures.