2019
DOI: 10.1063/1.5114661
|View full text |Cite
|
Sign up to set email alerts
|

Complex transients of input power and electron density in pulsed inductively coupled discharges

Abstract: Time-dependent studies of pulsed inductively coupled Ar and Ar/CF4 discharges are presented in this work. By using a time-resolved power diagnosis system, i.e., a Langmuir probe and a Hairpin probe, the temporal evolutions of input power and electron density are measured. In the initial pulse stage, the input power exhibits two peaks, which are related to the properties of the source and the plasma, respectively. In addition, an overshoot of the electron density is observed in the initial pulse stage at high p… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
9
0

Year Published

2020
2020
2023
2023

Publication Types

Select...
8

Relationship

4
4

Authors

Journals

citations
Cited by 11 publications
(9 citation statements)
references
References 46 publications
0
9
0
Order By: Relevance
“…Additionally, the oxidation layer is inescapability deposited on the Langmuir probe tip in an O 2 plasma, which will reduce the current collected by the probe. [20] It can be seen that with the pressure increasing, the electron density monotonously decreases and the E-to H-mode transition threshold power gradually increases. This is caused by the fact that with the pressure increasing, electron energy relaxation length decreases, so that more energy is consumed by the inelastic collisions, leading to the decrease of ionization reaction and, thereby, the increase of the critical applied power of the mode transition.…”
Section: Resultsmentioning
confidence: 94%
See 1 more Smart Citation
“…Additionally, the oxidation layer is inescapability deposited on the Langmuir probe tip in an O 2 plasma, which will reduce the current collected by the probe. [20] It can be seen that with the pressure increasing, the electron density monotonously decreases and the E-to H-mode transition threshold power gradually increases. This is caused by the fact that with the pressure increasing, electron energy relaxation length decreases, so that more energy is consumed by the inelastic collisions, leading to the decrease of ionization reaction and, thereby, the increase of the critical applied power of the mode transition.…”
Section: Resultsmentioning
confidence: 94%
“…More details about the chamber can be found elsewhere. [19][20][21][22][23] A commercial Langmuir probe [24][25][26][27][28][29] (Impedans ALP System TM ) is used to measure the electron density at the axial center and 3 cm below the quartz window. The probe tip is made of tungsten wire with 10 mm in the length and 0.3 mm in the diameter.…”
Section: Methodsmentioning
confidence: 99%
“…[13,87,[101][102][103][104][105] As the pulse ignition is a non-equilibrium process, high-resolution timedependent diagnostics are indispensable for the determination of the dynamic evolution of plasma parameters. [79,106,107] Gao et al [108] measured the temporal evolution of the input power and the electron density in a pulse-modulated ICP in argon, and examined the effects of the RF power and gas pressure. It was found that during the initial stage of the pulse-on period, the input power exhibits two maxima, and meanwhile the electron density was observed to exhibit an overshoot at a high power and a low pressure.…”
Section: -12mentioning
confidence: 99%
“…This density peak may be caused by the release of charge by capacitance and inductance in RF power resource. [20] Figure 2(c) displays the temporal evolutions of effective electron temperature at different axial positions. It can be seen from the diagram that the effective electron temperature is high when the power is turned on, and then decreases gradually.…”
Section: Axial Distribution In Ar Dischargementioning
confidence: 99%
“…The study of overshoot phenomenon is beneficial to understand it and improve the uniformity of plasma. The temporal evolutions of input power and electron density in Ar and Ar/CF 4 pulsed ICP were investigated by Gao et al [20] They found that the input power appears two peaks and the electron density presents an overshoot during the initial pulse-on stage, and the overshoot decays at lower powers and higher pressures. The work in this paper goes into the previous work by focus more on the dependence of overshoot phenomenon on spatial positions.…”
Section: Introductionmentioning
confidence: 99%