2021
DOI: 10.1088/1674-1056/abd16b
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Spatio-temporal measurements of overshoot phenomenon in pulsed inductively coupled discharge*

Abstract: Pulse inductively coupled plasma has been widely used in the microelectronics industry, but the existence of overshoot phenomenon may affect the uniformity of plasma and generate high-energy ions, which could damage the chip. The overshoot phenomenon at various spatial locations in pulsed inductively coupled Ar and Ar/CF4 discharges is studied in this work. The electron density, effective electron temperature, relative light intensity, and electron energy probability function (EEPF) are measured by using a tim… Show more

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Cited by 3 publications
(3 citation statements)
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“…It is not surprising that the wide practical use of RF discharges, in particular, in the problems of etching semiconductor wafers, has led to the appearance of numerous works [4][5][6][7][8][9][10][11][12][13][14][15][16][17] studying the pulse-modulated operation mode of plasma reactors.…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations
“…It is not surprising that the wide practical use of RF discharges, in particular, in the problems of etching semiconductor wafers, has led to the appearance of numerous works [4][5][6][7][8][9][10][11][12][13][14][15][16][17] studying the pulse-modulated operation mode of plasma reactors.…”
Section: Introductionmentioning
confidence: 99%
“…The authors of [14,15] studied the pulse-modulated inductively coupled discharge in Ar and Ar/CF 4 mixture. They measured the time dependencies of input power, electron density, effective electron temperature, relative light intensity, and electron energy probability function.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation