Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs

Kuhns, Nathan; Caley, Landon; Rahman, Ashfaqur; Ahmed, Shamim; Di, Jia; Mantooth, H. Alan; Francis, A. Matthew; Holmes, James

doi:10.1109/tdmr.2016.2530664

Cited by 42 publications

(11 citation statements)

References 7 publications

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“…For downhole exploration, fluxgate sensors generally use analog circuit structure, which has the advantages of simple structure and good temperature resistance, but its performance is limited by noise interference [1] . With the continuous development of integrated circuit technology, the temperature resistance of digital circuits has been able to meet the temperature requirements of downhole exploration [2] . At the same time, the digital circuit has a strong anti-interference capability, and the addition of feedback signals can substantially improve the performance of fluxgate sensors [3] .…”

Section: Introductionmentioning

confidence: 99%

High-temperature digital circuit design for fluxgate sensor

Zhang

Gao

et al. 2022

J. Phys.: Conf. Ser.

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With the continuous development of integrated electronics and the increasing demand for downhole resource exploration, it has become important to develop a small size, high temperature resistant, high-performance digital fluxgate sensor. Due to the strict size limitation of downhole exploration equipment, some high-temperature devices are generally large in size and have a different performance of the same type of devices, so it is necessary to select the devices that meet the temperature requirements through high-temperature experiments. In this paper, by simplifying the circuit structure and selecting devices through high-temperature experiments, the usability of the circuit structure at 175°C and the stable performance in long-time operation at high temperature were verified.

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Section: Introductionmentioning

confidence: 99%

High-temperature digital circuit design for fluxgate sensor

Zhang

Gao

et al. 2022

J. Phys.: Conf. Ser.

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“…There are several device options, such as MOSFET [14], [15], [16], JFET [17], [18] and BJT [19], [20], [21], in the SiC circuit design for > 400 • C applications. BJT is more thermally stable compared to MOSFET.…”

Section: Introductionmentioning

confidence: 99%

“…The gate dielectric of MOSFET has durability issues under a high temperature stress and it leads to a threshold voltage shift over time [22]. The most complex SiC-based circuit has been realized in CMOS with 1398 transistors, but the maximum operational temperature is only 300 • C [23].…”

Section: Introductionmentioning

confidence: 99%

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

Hou

Shakir

Hellström

et al. 2020

IEEE J. Electron Devices Soc.

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An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 (16×16) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 • C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art. INDEX TERMS Silicon carbide (SiC), image sensor, ultraviolet (UV), photodiode, high temperature, bipolar junction transistor (BJT), transistor-transistor logic (TTL).

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“…For instance, multistage digital and analog SiC-ICs using 4H-SiC MESFETs are demonstrated in [17] showing correct operation at 300 °C. Seventeen circuits implemented with the Raytheon’s 4H-type HTSIC process were reported in [18] and successfully tested at 300 °C. In [19], HT voltage and current references are designed with a silicon carbide CMOS process.…”

Section: Introductionmentioning

confidence: 99%

A GaN-Based Wireless Monitoring System for High-Temperature Applications

Hassan

Ali

Trigui

et al. 2019

Sensors

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A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and −14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm2. The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25–350 °C).

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Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs

Cited by 42 publications

References 7 publications

High-temperature digital circuit design for fluxgate sensor

High-temperature digital circuit design for fluxgate sensor

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

A GaN-Based Wireless Monitoring System for High-Temperature Applications

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