2012
DOI: 10.1016/j.jcrysgro.2011.09.058
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Complex formation and background impurity of Oxygen in the PbTe:Eu doped crystals grown from melt by the Bridgman method

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Cited by 4 publications
(10 citation statements)
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“…6 shows that all the M(H) dependences of the sample 4 can be described very well if assuming that in addition to the crystal matrix and Eu ions its magnetization is determined also by the contribution of paramagnetic centers with the spin ½ . The magnetic-ordered Eu centers such as NN and NNN pairs in PbTe:Eu crystals, where Eu is a doping impurity, are formed mainly by europium and oxygen [12]. We found that the distribution of the Pb-based inclusions inside the surface layers of PbTe:Eu crystals correlated with the distribution of the small Eu complexes.…”
Section: Discussionmentioning
confidence: 71%
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“…6 shows that all the M(H) dependences of the sample 4 can be described very well if assuming that in addition to the crystal matrix and Eu ions its magnetization is determined also by the contribution of paramagnetic centers with the spin ½ . The magnetic-ordered Eu centers such as NN and NNN pairs in PbTe:Eu crystals, where Eu is a doping impurity, are formed mainly by europium and oxygen [12]. We found that the distribution of the Pb-based inclusions inside the surface layers of PbTe:Eu crystals correlated with the distribution of the small Eu complexes.…”
Section: Discussionmentioning
confidence: 71%
“…According to [12,13], M Eu was calculated as the sum of the contributions of single centers M S , the nearest-neighbor (NN) pairs with ferromagnetic interaction M P1 , and the next-nearest-neighbor (NNN) pairs M P2 with antiferromagnetic interaction:…”
Section: Discussionmentioning
confidence: 99%
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“…Their physical properties are determined by both the intrinsic defects of crystal lattice and the foreign impurities. The impurities of rare earths elements are especially effective in controlling the system of intrinsic defects and other important parameters of these materials [6][7][8][9][10][11]. The use of doping processes requires control of the real distribution of the doping impurities in the doped crystals.…”
Section: Introductionmentioning
confidence: 99%