1995
DOI: 10.1063/1.114766
|View full text |Cite
|
Sign up to set email alerts
|

Complete recrystallization of amorphous silicon carbide layers by ion irradiation

Abstract: Ion-beam-induced recrystallization of amorphous surface layers on single-crystalline silicon carbide substrates (6H–SiC) has been investigated at temperatures of 500 and 1050 °C by cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry and channeling. It is shown, that ion irradiation substantially reduces the onset temperature of both the epitaxial layer regrowth and the random nucleation of crystalline grains. Two recrystallization regimes have been found. At 500 °C ion-b… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

2
38
0

Year Published

2003
2003
2019
2019

Publication Types

Select...
6
1
1

Relationship

0
8

Authors

Journals

citations
Cited by 64 publications
(40 citation statements)
references
References 0 publications
2
38
0
Order By: Relevance
“…Vapor-phase condensation experiments have shown that in contrast to silicates SiC grains inherently condense in the crystalline state (Clément 2002). Furthermore, SiC as a semiconducting material can easily recrystallize from the amorphous structure by combination of ion irradiation and annealing (Heera et al 1995 leading to a recrystallization of 3C-SiC grains (cubic modification).…”
Section: Conclusion Of Astrophysical Relevancementioning
confidence: 99%
“…Vapor-phase condensation experiments have shown that in contrast to silicates SiC grains inherently condense in the crystalline state (Clément 2002). Furthermore, SiC as a semiconducting material can easily recrystallize from the amorphous structure by combination of ion irradiation and annealing (Heera et al 1995 leading to a recrystallization of 3C-SiC grains (cubic modification).…”
Section: Conclusion Of Astrophysical Relevancementioning
confidence: 99%
“…After subsequent annealing at 1000 °C/75', the increasing intensity of the diffuse peak (Fig. 3c) might be due to a slight increasing volume of strongly disordered 6H-SiC related to some reconstruction of Fe-containing regions (in different SiC polytypes [12,13]; in new ferromagnetic phases; …) leading to a new distribution of Fe sites as detected by CEMS.…”
Section: Discussionmentioning
confidence: 93%
“…• C [44][45][46], i.e. at a quite lower temperature than that required for damage recovery by thermal annealing.…”
Section: Swift Heavy Ion Beam Induced Epitaxialmentioning
confidence: 99%