Complete polarization mode control of long-wavelength tunable vertical-cavity surface-emitting lasers over 65-nm tuning, up to 14-mW output power

Matsui, Y.; Vakhshoori, D.; Wang, Peidong; Chen, Peili; Lu, Chih-Cheng; Jiang, Min; Knopp, K.J.; Burroughs, Scott; Tayebati, P.

doi:10.1109/jqe.2003.816110

Cited by 53 publications

(21 citation statements)

References 39 publications

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“…Commercial devices exhibit >100nm tuning range, with the best research results to date exhibiting 150nm of tuning. We note that the fractional tuning range obtained with best research results (150nm/1300nm=11.5%, similar to 122nm/1060nm=11.5%) represents nearly a factor of 3 increase over the best MEMS-VCSELs reported prior to 2011 (65nm/1550nm=4.2%) 8 . In addition to our results, another group in 2011 also reported 102nm tuning range in a 1550nm VCSEL using slower electro-thermal tuning at ~hundreds of Hz 21 , and 74nm at 1550nm using faster electrostatic MEMS tuning up to 215 kHz 22 .…”

Section: Optically Pumped 1300nm and 1060nm Vcsel Device Performancesupporting

confidence: 65%

“…At 1060nm, these challenges can likely be overcome, due to the fact that 90-100nm tuning is likely adequate for most ophthalmic applications, 122nm has already been achieved in optically pumped devices, and compressively strained InGaAs quantum wells provide very high gain 29 . In addition, however, although single transverse mode operation is relatively easy to achieve in optical pumping using a single-mode pump beam and half-symmetric cavity 8 , it is more challenging in electrical pumping. This is because creation of a current aperture for electrical pumping also creates a refractive index step, which can create strong lateral guiding and excite lateral transverse modes.…”

Section: Electrically Pumped 1060nm Mems-vcselsmentioning

confidence: 99%

“…Although MEMS-VCSELs were first conceived in the mid 1990's 6,7 , development efforts in the field until 2009 were driven primarily by telecommunications and narrow-tuning spectroscopic applications [8][9][10] . In 2009, Praevium Research, Advanced Optical Microsystems, commercial partner Thorlabs, and academic partner Massachusetts Institute of Technology (MIT) began developing a swept source based on amplified MEMS-VCSELs, targeting SS-OCT as a primary application.…”

Section: Introductionmentioning

confidence: 99%

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Recent advances in MEMS-VCSELs for high performance structural and functional SS-OCT imaging

et al. 2014

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Since the first demonstration of swept source optical coherence tomography (SS-OCT) imaging using widely tunable micro-electromechanical systems vertical cavity surface-emitting lasers (MEMS-VCSELs) in 2011, VCSEL-based SS-OCT has advanced in both device and system performance. These advances include extension of MEMS-VCSEL center wavelength to both 1060nm and 1300nm, improved tuning range and tuning speed, new SS-OCT imaging modes, and demonstration of the first electrically pumped devices. Optically pumped devices have demonstrated continuous singlemode tuning range of 150nm at 1300nm and 122nm at 1060nm, representing a fractional tuning range of 11.5%, which is nearly a factor of 3 greater than the best reported MEMS-VCSEL tuning ranges prior to 2011. These tuning ranges have also been achieved with wavelength modulation rates of >500kHz, enabling >1 MHz axial scan rates. In addition, recent electrically pumped devices have exhibited 48.5nm continuous tuning range around 1060nm with 890kHz axial scan rate, representing a factor of two increase in tuning over previously reported electrically pumped MEMS-VCSELs in this wavelength range. New imaging modes enabled by optically pumped devices at 1060nm and 1300nm include full eye length imaging, pulsatile Doppler blood flow imaging, high-speed endoscopic imaging, and hand-held wide-field retinal imaging.

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Section: Optically Pumped 1300nm and 1060nm Vcsel Device Performancesupporting

confidence: 65%

Section: Electrically Pumped 1060nm Mems-vcselsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Recent advances in MEMS-VCSELs for high performance structural and functional SS-OCT imaging

et al. 2014

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“…For example, pumping a VECSEL with multiple pump diodes connected in series can yield a high slope differential modulation capability useful in microwave photonics applications. Fast laser wavelength tuning might also prove important; such fast tuning is possible with MEMS-tunable optically pumped VECSELs that were developed for optical fiber communication applications [216][217][218].…”

Section: Current and Future Research Directionsmentioning

confidence: 99%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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“…The application of this fast spin relaxation to ultrafast switching devices has been attempted [5][6][7]. In addition, because of the recent discovery of the considerable effect of spin polarization on vertical-cavity surface-emitting lasers [8], information on spin behavior has become important in the development of optical devices.The III-nitride-based semiconductors have been intensively investigated owing to strong interest in their application to optical devices such as the blue laser [9]. Investigations on spin dynamics in the GaN system are expected to yield information on the applicability of spin-related phenomena in the GaN system [10][11][12][13][14].…”

mentioning

confidence: 99%

Picosecond spin relaxations of acceptor‐bound exciton and A‐band free exciton in wurtzite GaN

Tackeuchi¹,

Otake

Fujita

et al. 2006

Phys. Status Solidi (c)

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The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T -0.175 , where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process. 1 Introduction Spin dynamics in semiconductors has been investigated with great interest, not only for fundamental physics but also for the application of spin-dependent optical nonlinearity such as spinmemory, spin-transistor and spin-switch devices. The picoseconds spin relaxation process in semiconductors became observable in the 1990s, using time-resolved spin-dependent pump and probe measurement [1] and time-resolved photoluminescence (PL) measurement with a streak camera system [2,3]. These experimental results revealed that the spin relaxation process decays rapidly in a few or a few ten picoseconds [1,4]. The application of this fast spin relaxation to ultrafast switching devices has been attempted [5][6][7]. In addition, because of the recent discovery of the considerable effect of spin polarization on vertical-cavity surface-emitting lasers [8], information on spin behavior has become important in the development of optical devices.The III-nitride-based semiconductors have been intensively investigated owing to strong interest in their application to optical devices such as the blue laser [9]. Investigations on spin dynamics in the GaN system are expected to yield information on the applicability of spin-related phenomena in the GaN system [10][11][12][13][14]. We have reported spin relaxation times of A-band free exciton in wurtzite GaN of 0.47-0.25 ps at 150-225K [11]. In cubic GaN, we have observed a long spin relaxation time of over 5 ns at 15 K [14]. The spin relaxation time is strongly affected by the band structure and the exciton state. In this paper, we report the observation of the spin relaxation process of acceptor-bound excitons in wurtzite GaN using time-resolved spin-dependent pump and probe reflectance measurement with subpicosecond time resolution.A shallow neutral acceptor-bound exciton (ABE) has a two-hole state derived from two holes in the topmost valence band [15]. Only one such state with J = 0 is allowed by the Pauli principle in wurtzite semiconductors. The additional electron in the ABE state then contributes to its unpaired spin; thus, this

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Complete polarization mode control of long-wavelength tunable vertical-cavity surface-emitting lasers over 65-nm tuning, up to 14-mW output power

Cited by 53 publications

References 39 publications

Recent advances in MEMS-VCSELs for high performance structural and functional SS-OCT imaging

Recent advances in MEMS-VCSELs for high performance structural and functional SS-OCT imaging

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Picosecond spin relaxations of acceptor‐bound exciton and A‐band free exciton in wurtzite GaN

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