Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition

Abstract

We have developed a new controllable method of selective and nonselective deposition of high quality aluminum by low-pressure chemical vapor deposition using dimethylaluminum hydride with hydrogen. At first, silicon dioxide via holes on silicon substrate were selectively filled with aluminum by thermal decomposition. Then, adding the plasma excitation for 1 min, the aluminum film began to deposit nonselectively on the silicon dioxide as well as the selectively deposited aluminum. Silicon dioxide via holes were completely planarized by the selective and nonselective deposition. The single-crystal structure of aluminum deposited selectively on silicon was observed with a new scanning microreflection high-energy electron diffraction microscope.

Optical and structural studies of GaN 3D structures selectively grown by MOCVD

“…These quantum structures are mainly constructed by MOCVD and MBE with pyramids or prism-like shapes [2,4]. Selective metal deposition has been achieved by the use of metal-organic (MO) aluminum compounds on suitably prepared silicon substrates [5,6]. New methods and mechanisms to selectively prepare 3D structures may be developed and explored in order to improve materials and devices.…”

New molecular compound precursor for aluminum chemical vapor deposition

“…Reports have been published on aluminum-selective CVD with relatively high deposition rates and highly conductive film using dimethylaluminum hydride (DMAH). 6,7 The disadvantage of DMAH as a CVD precursor is its high viscosity, which causes difficulty in bubbling DMAH in a conventional vessel. In order to decrease the DMAH viscosity and to increase the flow rate of the precursor, we tried to mix it with a solvent having lower viscosity and high vapor pressure.…”

Fourier transform infrared diagnostics of gas phase reactions in the metalorganic chemical vapor deposition of aluminum from dimethylethylamine alane

“…[1][2][3] For the deposition of Al using a metalorganic CVD ͑MOCVD͒ process, organometallic compounds such as alkyl aluminum and amine-alane adducts have been used extensively. 4,5 In particular, dimethylethylamine alane ͑DMEAA͒, an adduct of alane (AlH 3 ) and dimethylethylamine ͓DMEA:N͑CH 3 ͒ 2 C 2 H 5 ͔, is the most recently introduced member of the amine family of precursors. Its relatively high vapor pressure at room temperature ͑1.5 Torr͒ and its ability to deposit carbon contamination free films, combined with the advantages of being a liquid, have made this precursor the center of attention recently.…”