2010
DOI: 10.1016/j.orgel.2010.09.017
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Complementary transfer-assisted patterning of high-resolution heterogeneous elements on plastic substrates for flexible electronics

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Cited by 16 publications
(13 citation statements)
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“…In contrast to semiconductors, a wider range of compliant dielectrics exist due to the natural tendency of several polymers to have some degree of insulating properties. Poly­(vinyl cinnamate) (PVCi) is one such dielectric commonly used in organic TFTs (OTFTs). Jang et al demonstrated the use of PVCi in a flexible organic TFT by dip coating a substrate in a solution of PVCi in chloroform, followed by photocuring the polymer at 255 nm through the chemical reaction illustrated in Figure . , When a metal insulator metal (MIM) capacitor was fabricated, the capacitance of the resulting structure was calculated to be ∼6 nF/cm 2 when the dielectric layer was 500 nm thick . In another study, Jang et al showed the lack of hydroxyl groups in the cross-linked polymer resulted in hysteresis free OTFTs when PVCi was used as the gate dielectric .…”
Section: Methodsmentioning
confidence: 99%
“…In contrast to semiconductors, a wider range of compliant dielectrics exist due to the natural tendency of several polymers to have some degree of insulating properties. Poly­(vinyl cinnamate) (PVCi) is one such dielectric commonly used in organic TFTs (OTFTs). Jang et al demonstrated the use of PVCi in a flexible organic TFT by dip coating a substrate in a solution of PVCi in chloroform, followed by photocuring the polymer at 255 nm through the chemical reaction illustrated in Figure . , When a metal insulator metal (MIM) capacitor was fabricated, the capacitance of the resulting structure was calculated to be ∼6 nF/cm 2 when the dielectric layer was 500 nm thick . In another study, Jang et al showed the lack of hydroxyl groups in the cross-linked polymer resulted in hysteresis free OTFTs when PVCi was used as the gate dielectric .…”
Section: Methodsmentioning
confidence: 99%
“…Each isolated TNP pattern, which is 500 μm wide and 14 mm long in the interval of 500 μm, represents an individual photoanode for a unit cell in the SS-DSSC array [14,15]. Figure  2c shows the FE-SEM image of the cross-sectional TNP pattern.…”
Section: Resultsmentioning
confidence: 99%
“…The optical microscopic image of the TNP patterns in the FTO regions on the substrate is shown in Figure 2 b where TNP patterns isolated from the neighboring patterns were clearly seen. Each isolated TNP pattern, which is 500 μm wide and 14 mm long in the interval of 500 μm, represents an individual photoanode for a unit cell in the SS-DSSC array [ 14 , 15 ]. Figure 2 c shows the FE-SEM image of the cross-sectional TNP pattern.…”
Section: Resultsmentioning
confidence: 99%
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