Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors

Kim, Se Hyun; Jang, Mi; Kim, Jiye; Choi, Harim; Baek, Kyung‐Youl; Park, Jin Young; Yang, Hoichang

doi:10.1039/c2jm33203e

Cited by 15 publications

(11 citation statements)

References 31 publications

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“…The highest mobility reaches 0.58 cm 2 V −1 s −1 in saturation regime. This value is in class with the highest mobility for PTCDI-C 13 H 27 transistors 29,30 . The other crucial parameter, the current on/off ratio, is used to evaluate the switch and amplification characteristics of transistor.…”

Section: Resultsmentioning

confidence: 79%

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Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

Liu

Wang

Tang

et al. 2018

Sci Rep

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Development of conformal n-channel organic phototransistor (OPT) array is urgent for future applications of organic complementary circuits in portable and wearable electronics and optoelectronics. In this work, the ultrathin conformal OPT array based on air-stable n-type PTCDI-C13H27 was fabricated. The OPT array shows excellent electrical and photoelectrical performance, good device uniformity, and remains stable in electron mobility by 83% after 90 days compared to the initial values. Eventhough mobility, on-state current, off-state current, and photocurrent of PTCDI-C13H27 thin film phototransistor show slight decrease with the decreased bending radius, the device still remains the stable photosensitivity as high as 104 when the device is freely adhered on the 2D surfaces and 3D hemispherical sphere, which is in a class with the highest photosensitivity for perylene diimide derivatives. These results present the promising application potential of our conformable air-stable n-type PTCDI-C13H27 OPTs as the photodetection system of curved artificial compound eyes in wearable and portable electronics and optoelectronics.

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Section: Resultsmentioning

confidence: 79%

“…1 clearly shows the device structure of OPT. In our experiments, PTCDI-C 13 H 27 was selected as the semiconductor active material of the n -type organic thin film transistor (OTFT), owing to its outstanding air stability and high electron transport capability 29,30 . The flexible device array was peeled from Si substrate as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

Liu

Wang

Tang

et al. 2018

Sci Rep

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“…To achieve better performance in these areas, many works have been focused on improving the dielectric properties of the materials by introducing various llers into the polymer matrix. [7][8][9] One of the traditional ways is to develop percolative dielectric materials with conductive particles as llers. For the percolative polymer composites, various nanosized metal particles including Ni, Al, and Ag have been employed as conductive llers.…”

Section: Introductionmentioning

confidence: 99%

High dielectric constant and low loss of polymeric dielectric composites filled by carbon nanotubes adhering BaTiO₃ hybrid particles

Liu

Feng

2015

RSC Adv.

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We reported the preparation of carbon nanotubes adhering BaTiO 3 nanoparticles (BT@CNTs) via chemical vapor deposition (CVD). Scanning electron microscopy, transmission electron microscope and Raman spectroscopy were carried out in order to confirm the successful adhesion. Dielectric properties of the PVDF-HFP composites filled by BT@CNTs were also studied. With the content of BT@CNTs increasing, the dielectric constant of composites remarkably increased, but the loss tangent gradually decreased. At 10 vol%, the dielectric constant of the PVDF-HFP/BT@CNTs composite was significantly increased to 27.7 at 50 Hz, which was 3 times and 65% higher than that of the pure PVDF-HFP and PVDF-HFP/BT composite, respectively. The loss tangent of the PVDF-HFP/BT@CNTs composite was lower even than that of pure PVDF-HFP. These attractive features of the PVDF-HFP/BT@CNTs composites suggested that the method proposed herein was a new approach to develop high performance composites, especially those with high dielectric constant and low dielectric loss.

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“…[ 33,34 ] In addition, the ordering of the molecules along the q xy direction enhanced the overlap between the π orbitals in the active layer, improving the charge‐carrier transport performance. [ 34,35 ] Furthermore, both cases (n‐ and p‐type OSCs) showed a PVA/PMF GI layer crystalline peak in the images (yellow asterisk mark in Figure 5), which again indicates that the OSC films in their entirety were deposited on the PVF/PMF GI layers. Therefore, the patterns corresponding to the crystal orientations were nearly identical to those of the OSCs deposited on the PVA and PVA/PMF layers.…”

Section: Resultsmentioning

confidence: 87%

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

et al. 2021

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Organic printable dielectric layers are required for next‐generation electronic circuits, particularly those used as gate insulators (GIs) in organic field‐effect transistors (OFETs). Herein, optimized electrohydrodynamic (EHD) jet printing with an electrostatic force‐assisted mode is suggested for the fabrication of polyvinyl alcohol (PVA)‐based dielectric patterns after careful consideration of the ink system. The PVA molecules maintain good solubility in polar solvents, even when a crosslinking agent is added, which enables a continuous PVA jet stream with a width smaller than the diameter of the nozzle to be stably obtained. Subsequent EHD printing produces uniform PVA patterns with a smooth surface morphology suitable for the crystal growth of overlying organic semiconductors. The addition of a crosslinking agent in PVA results in direct GI patterns that exhibit superior insulating properties with high dielectric strength as compared with PVA without crosslinking agents. The OFETs with PVA‐based GIs prepared with EHD printing show stable operation with low gate leakage currents. In addition, the feasibility of EHD‐printed PVA layers is demonstrated for application as GIs in organic complementary logic gates.

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Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors

Cited by 15 publications

References 31 publications

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

High dielectric constant and low loss of polymeric dielectric composites filled by carbon nanotubes adhering BaTiO₃ hybrid particles

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

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Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors

Cited by 15 publications

References 31 publications

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

High dielectric constant and low loss of polymeric dielectric composites filled by carbon nanotubes adhering BaTiO3 hybrid particles

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

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Product

Resources

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High dielectric constant and low loss of polymeric dielectric composites filled by carbon nanotubes adhering BaTiO₃ hybrid particles