Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor–Solid–Solid Chemical Vapor Deposition

Yang, Zhousheng; Liu, Lizhe; Yip, SenPo; Li, Dapan; Shen, Lifan; Zhou, Ziyao; Han, Ning; Hung, Tai‐Feng; Pun, Edwin Yue‐Bun; Wu, Xinglong; Song, Aimin; Ho, Johnny C.

doi:10.1021/acsnano.7b01217

Cited by 41 publications

(58 citation statements)

References 56 publications

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“…Controllable growth of high-quality III-V NWs is the first and key issue for their applications. Both liquid and vapor phase growth methods have been developed for the controllable growth of 1D NWs in the past decades, including electrochemical deposition [89,90], MBE [53,58,59,91], MOCVD [31,[92][93][94][95] and CVD [6,12,43,65,96,97] etc. As compared to liquid-grown III-V NWs, vapor-grown III-V NWs show better crystalline and they are more suitable for quantum computing and electronics devices [34,98].…”

Section: The Fundamental Properties and Growth Mechanism Of Sb-based mentioning

confidence: 99%

“…Beside the seed stem-assisted MOVPE growth method, the simple and low-cost growth method of CVD has also been developed for the controllable growth of GaSb NWs [6,41,43,65]. However, the unintentional radial VS growth is always present in the conventional CVD method, resulting in thick GaSb NWs with tapered shape [41,121,122].…”

Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning

confidence: 99%

“…With the highest hole mobility of 1000 cm 2 V −1 s −1 among all III-V semiconductors [12,[36][37][38][39][40], GaSb NWs has been regarded as the potential substitution of p-type Si in the low-power and high speed FETs [41,42]. With a diameter around 10 nm, Yang et al demonstrated that the hole mobility of 111 á ñ-oriented GaSb NWs can reach ∼200 cm 2 V −1 s −1 [43]. Also, complementary metal oxide semiconductor (CMOS) inverter based on single GaSb NW has been fabricated successfully by Dey et al [37].…”

Section: Introductionmentioning

confidence: 99%

“…Generally, metal particles are used as catalysts for the vapor growth of Sb-based III-V NWs, following two famous growth mechanism of vapor-liquid-solid (VLS) [66,67] and vapor-solid-solid (VSS) [68,69]. The growth mechanism, diameter and growth orientation of NWs can be easily controlled by the kinds and size of the selected metal particles catalyst [27,43,65,70]. However, by using the common growth methods of MOVPE, CBE, and MBE, it is difficult to control the diameter of Sb-based III-V NWs on the other III-V semiconductor NWs stems, even if the smallest catalyst particles were used.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the surfactant effect of Sb atoms will cause the uncontrolled radial vapor solid (VS) growth of Sb-based III-V NWs and limit the minimum attainable diameter [60]. Fortunately, a surfactant-assisted CVD method has been developed for the controllable growth of thin GaSb NWs by Yang et al [6,43,65]. During the NWs growth process, the surfactant of sulfur can passivate the surface Sb atoms to form stable covalent bonds of Sb-S on the NWs surface, preventing the uncontrolled radial VS growth.…”

Section: Introductionmentioning

confidence: 99%

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Recent advances in Sb-based III–V nanowires

et al. 2019

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Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

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Section: The Fundamental Properties and Growth Mechanism Of Sb-based mentioning

confidence: 99%

Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Recent advances in Sb-based III–V nanowires

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Recent Advances in Group III–V Nanowire Infrared Detectors

Sun

Han

et al. 2018

Advanced Optical Materials

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Abstract1D III–V semiconductor nanowires (NWs) attract significant interests in fundamental physics and promising applications of high‐performance room‐temperature infrared (IR) detectors. Here, a comprehensive overview of recent advances in the study of III–V NW‐based IR detectors is presented, starting from the rationale of III–V NWs for IR detectors, the controllable synthesis of III–V NWs to the precise manipulation of III–V NW‐based IR detector performances. With a bandgap covering the whole IR wavelength range and a high carrier mobility, III–V NWs are considered as the most optimal channel materials for high‐performance IR detectors. The synthesis methods and growth mechanisms of high quality III–V NWs are discussed, emphasizing the low‐cost solid source chemical vapor deposition (CVD) technique, which is developed as the two‐step and surfactant‐assisted CVD methods in the growth of various III–V NWs. Next, the representative types of III–V NW IR detectors are discussed and typical strategies to resolve main challenges limiting the performance of III–V NW‐based IR detectors are reviewed, including high density of surface trap states, large dark current, etc. Finally, the possible challenges and opportunities in the future development of III–V NW‐based IR detectors are discussed.

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Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Yin

Guo

Liu

et al. 2022

Advanced Optical Materials

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the near future by constructing all-around NWs field-effect-transistors (NWFETs), complementary metal-oxide-semiconductor (CMOS) inverts, etc. [6,7] On the other hand, with narrow bandgaps of 0.35 and 0.77 eV, InAs and GaSb NWs are also considered as the ideal channel semiconductors for next-generation high-performance infrared photodetectors, demonstrating high responsivity of ≈10 4 AW -1 and detectivity of ≈10 12 Jones for near-infrared to middleinfrared at room temperature. [8][9][10] Especially, with a closing bandgap (1.42 eV) of Shockley-Queisser limit, typical III-V semiconductor of GaAs NW has been studied in the fields of not only infrared photodetectors but also high-efficiency solar cells. [11][12][13][14] Owing to the extreme photon collection boost in free-standing NWs, the efficiency of single GaAs NW can be as high as 40%. [14] Recently, for achieving high-performance broad-spectrum photodetectors, ternary alloy III-V semiconductors of InGaAs NWs and GaAsSb NWs with full composition range have become the research stars. [15][16][17][18][19] The hot development of wearable or flexible optoelectronic devices is challenging the research of III-V NWs. [20][21][22][23] Recently, lightweight structured fabrics with tunable mechanical properties enabled by non-convex interlocked particles have been realized by Wang et al. [20] Obviously, the successful growth of largescale high-quality III-V NWs on the expected novelty functional fabrics directly will promote the next-generation wearable or flexible electronics and photoelectronics. In the past decades, metal-organic chemical vapor deposition, molecular beam epitaxy, metal-organic vapor phase epitaxy, and chemical vapor deposition (CVD) methods are the commonly adopted technologies for the growth of high-quality III-V NWs. [24][25][26][27][28][29][30][31][32][33] Generally speaking, expensive wafers of GaSb, InAs, GaAs, InP, etc. are used as the growth substrates for overcoming the lattice mismatch during NWs growth process. [34,35] Fortunately, metals of Au, Sn, Pd, etc. can be deposited on the selected substrates as growth catalysts for III-V NWs, followed by vapor-liquidsolid (VLS) or vapor-solid-solid (VSS) growth mechanism. [36,37] Generally speaking, during the VLS growth process, the adopted metals catalysts are liquid, which requires the eutectic Large-scale growth of high-quality III-V nanowires (NWs) on an expected substrate is challenging the next-generation optoelectronic devices. In this work, high-quality III-V NWs of binary GaSb, GaAs and ternary GaAs x Sb 1−x , In x Ga 1−x As are successfully prepared on the hard substrates of SiO 2 /Si, amorphous glass and flexible substrates of mica, glass fiber, and carbon cloth by adopting the simple and low-cost metal-catalyzed chemical vapor deposition (CVD) method. The homogeneity of morphology, crystallinity, and stoichiometry is checked by scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, implying the high-q...

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Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor–Solid–Solid Chemical Vapor Deposition

Cited by 41 publications

References 56 publications

Recent advances in Sb-based III–V nanowires

Recent advances in Sb-based III–V nanowires

Recent Advances in Group III–V Nanowire Infrared Detectors

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

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