Complementary integrated circuits on plastic foil using inkjet printed n- and p-type organic semiconductors: Fabrication, characterization, and circuit analysis

Smaal, Wiljan T. T.; Kjellander, Charlotte; Jeong, Yongbin; Tripathi, Ashutosh; Putten, Bas van der; Facchetti, Antonio; Yan, Henry; Quinn, Jordan R.; Anthony, John E.; Myny, Kris; Dehaene, Wim; Gelinck, Gerwin H.

doi:10.1016/j.orgel.2012.05.022

Cited by 57 publications

(41 citation statements)

References 31 publications

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“…However, these techniques generally require extra steps to align the electrodes and the OSC layer, which can increase fabrication cost and reduce device yield. Inkjet printing (59)(60)(61)(62)(63) and roll-to-roll printing (27,(64)(65)(66) are the two most commonly used methods to fabricate organic circuits and have the greatest potential for enabling large-area, low-cost organic electronics. These techniques, however, suffer from registration inaccuracies requiring large features and specially designed layouts and processes (27,64,66).…”

Section: Discussionmentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost largearea electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed "controlled OSC nucleation and extension for circuits" (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit halfadder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication.organic semiconductors | patterning | small molecules | transistors | circuits

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Section: Discussionmentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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“…Only a handful of reports on OFET alternating current (AC) characterization use fabrication techniques that even partially fulfi l the requirements set out above. [12][13][14][15][16][17][18][19][20][21][22][23] However to build functional fl exible circuits it is important to understand how to reconcile device fabrication and performance. [24][25][26] This is a requirement if plastic electronics are to be implemented in applications such as radio frequency identifi cation (RFID) tags which operate at megahertz frequencies.…”

Section: Doi: 101002/aelm201500024mentioning

confidence: 99%

Self‐Aligned Megahertz Organic Transistors Solution‐Processed on Plastic

Higgins

Muir

Wade

et al. 2015

Adv Elect Materials

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The processing of complex nanoscale electronic structures on plastic substrates is a significant challenge, requiring the combination of low temperature, nonaggressive, and high resolution methods. Here a scalable process flow on plastic is presented tbat enables the fabrication of flexible nanoimprinted organic field‐effect transistors (OFETs) with self‐aligned contacts and solution‐processed semiconductor and dielectric layers, at processing temperatures ≤ 150 °C. OFETs are fabricated with device cutoff frequencies f > 1 MHz at low operating bias V DS = −15 V. The technique allows the patterning of metal structures over four orders of magnitude from 375 nm to 1 mm without the need for a rigid carrier, and provides a fabrication pathway to high performance nanostructured organic circuitry.

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“…This is where additive printing processes have the potential to yield dividends, allowing the selective deposition of materials onto the substrate. Among these techniques both inkjet and gravure printing have been widely adopted.Inkjet printing has been used to fabricate a wide range of electrical components, including: complementary and ambipolar inverters, [ 6,7 ] quasistatic memory, [ 8 ] biosensors, [ 9 ] and organic …”

mentioning

confidence: 99%

mentioning

confidence: 99%

“…Inkjet printing has been used to fabricate a wide range of electrical components, including: complementary and ambipolar inverters, [ 6,7 ] quasistatic memory, [ 8 ] biosensors, [ 9 ] and organic via a bilayer liftoff process, before semiconductor patterning by either gravure or inkjet printing. Each substrate variant had two different semiconductors patterned on adjacent devices to facilitate complementary circuits.…”

mentioning

confidence: 99%

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Complementary Organic Logic Gates on Plastic Formed by Self‐Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors

Higgins

Muir

Dell’Erba

et al. 2016

Adv Elect Materials

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photo detectors. [ 10 ] Similarly gravure printing has been used to fabricate circuits such as: complementary ring oscillators, [ 11 ] logic gates, [ 12 ] unipolar fl ip-fl ops and half-adders. [ 13,14 ] Although previous reports have combined gravure and inkjet printing to fabricate p-type organic fi eld-effect transistors (OFETs), [ 15 ] there is a lack of direct comparative studies of the impact of each process on the electrical performance of devices. Here, we explore gravure versus inkjet printing of semiconductors, gravure printing versus photolithographic patterning of the OFET dielectric, and long-channel (>1 µm) versus short channel (<1 µm) OFETs.Gravure printing enables very large-area, fast, roll-to-roll manufacturing, limited by the expense and time cost of fabricating clichés (printing plates). [ 16,17 ] Inkjet printing enables a computer-designed circuit to be printed readily and easily, limited by the relative throughput and speed of printing. [ 2 ] However, the resolution of both technologies is still restricted to the micrometer scale and larger by the challenge of reliably transferring inks onto a substrate without spreading or dewetting, while still maintaining electrical performance. While recent approaches are improving upon this limit, for example, the work of Kang et al. on gravure printed sub-5 µm gate electrodes, [ 18 ] or that of Sekitani et al. on 2 µm inkjet printed electrodes, [ 19 ] the options for patterning sub-micrometer electrode geometries are limited.We have previously demonstrated how ultraviolet nanoimprint lithography (UV-NIL) is a viable method for patterning sub-micrometer channel length OFETs on plastic. [ 20 ] Our approach also uses self-aligned lithography to minimize the overlap between the gate-source and gate-drain electrodes, reducing parasitic overlap capacitances that reduce the switching speed of OFETs. [ 21,22 ] Self-alignment yields other benefi ts such as overcoming equipment alignment tolerances, reducing leakage currents, and is compatible with more complex circuitry such as self-aligned unipolar ring oscillators. [ 23 ] In this work, we have used bottom-gate bottom-contact architectures, to avoid exposing the semiconductor to both the ultraviolet light and processing chemicals used for self-alignment. In addition to self-alignment, here we extend the fabrication approach further by incorporating gravure printed dielectrics and semiconductors, as well as inkjet printed semiconductors. We demonstrate both p-and n-type devices patterned side-by-side on the same substrate along with complementary inverters and logic gates. Figure 1 illustrates the materials and architectures used in this work. Aluminum OFET gates were patterned either photolithographically (PL) or via UV-NIL. A cross-linkable proprietary dielectric (GSID 938109-1, BASF) [ 24,25 ] was either PL patterned or gravure printed. Self-aligned gold electrodes were patterned Organic electronics is a maturing fi eld, [ 1 ] replete with a large variety of devices and fabrication technologies. [ 2 ] Often...

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Complementary integrated circuits on plastic foil using inkjet printed n- and p-type organic semiconductors: Fabrication, characterization, and circuit analysis

Cited by 57 publications

References 31 publications

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Self‐Aligned Megahertz Organic Transistors Solution‐Processed on Plastic

Complementary Organic Logic Gates on Plastic Formed by Self‐Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors

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