Complementary digital logic based on the ‘‘Coulomb blockade’’

Tucker, J. R.

doi:10.1063/1.352206

Cited by 360 publications

(175 citation statements)

References 28 publications

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“…13,14) For simplicity, we ignore cotunneling effects in this calculation and set the operation temperature to 0 K, as we did in previous studies. 15,16,[18][19][20] Details of the simula- Therefore, a series of single-electron extractions and injections is realized under this condition.…”

Section: Monte Carlo Simulation Of Set Operationmentioning

confidence: 99%

A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

Ikeda¹,

Salleh²

2011

Jpn. J. Appl. Phys.

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We propose a novel single-electron refrigerator (SER) that can be fabricated from semiconductor materials such as a silicon-on-insulator wafer. The SER consists of a single-electron box and a single-electron pump (SEP). An equivalent circuit of the SEP refrigerator was derived. Its stability diagram (Coulomb diamond) was theoretically calculated and found to have a distorted honeycomb structure. In addition, a Monte Carlo simulation based on the orthodox theory for the Coulomb blockade phenomenon predicts successful single-electron extraction and injection.

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Section: Monte Carlo Simulation Of Set Operationmentioning

confidence: 99%

A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

Ikeda¹,

Salleh²

2011

Jpn. J. Appl. Phys.

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“…An electron tunnels through the insulator if the distance between the conductors is small enough [5][6][7][8][9]. The theory of single electron phenomena shows that the charging energy is:…”

Section: Introductionmentioning

confidence: 99%

Area efficient digital logic NOT gate using single electron box (SEB)

Bahrepour

2017

Int. J. Simul. Multisci. Des. Optim.

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-The continuing scaling down of complementary metal oxide semiconductor (CMOS) has led researchers to build new devices with nano dimensions, whose behavior will be interpreted based on quantum mechanics. Singleelectron devices (SEDs) are promising candidates for future VLSI applications, due to their ultra small dimensions and lower power consumption. In most SED based digital logic designs, a single gate is introduced and its performance discussed. While in the SED based circuits the fan out of designed gate circuit should be considered and measured. In the other words, cascaded SED based designs must work properly so that the next stage(s) should be driven by the previous stage. In this paper, previously NOT gate based on single electron box (SEB) which is an important structure in SED technology, is reviewed in order to obtain correct operation in series connections. The correct operation of the NOT gate is investigated in a buffer circuit which uses two connected NOT gate in series. Then, for achieving better performance the designed buffer circuit is improved by the use of scaling process.

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“…Therefore, the dual-gated structure forms an appealing alternative to enhance the tunability of the QD device. Such gate structure is also advantageous for the application of integrated circuits, such as complementary-type single-electron inverters, 13 in which control of the peaks of Coulomb oscillation is required. …”

mentioning

confidence: 99%

Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

Motohisa

Nakajima

Fukui

et al. 2002

Applied Physics Letters

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We report on the fabrication of a dual-gated single-electron transistor ͑SET͒ based on a quantum dot ͑QD͒ formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature transport properties. We observe clear Coulomb oscillations in a SET fabricated in combination with direct growth of nanostructures and lithographically defined metal gates. The magnetic field dependence of the Coulomb oscillations as well as the Coulomb diamonds suggest strong carrier confinement in our QD. © 2002 American Institute of Physics. ͓DOI: 10.1063/1.1470246͔Single-electron transport through semiconductor quantum dots ͑QDs͒ has recently attracted considerable attention. From the application point of view, single-electron devices utilizing Coulomb blockade effects have the potential to realize circuits with high-density integration and low power consumption. 1 From the physics point of view, the threedimensional confinement in a QD gives rise to a discrete energy spectrum in analogy to atoms. The shell structure can be detected by single-electron transport. 2 Furthermore, when the QD has a net spin, it can be considered as a localized magnetic impurity with tunable parameters, offering a playground for tunable Kondo physics. 3 Realization of very small QDs is required for possible operation at high temperatures.We have reported before on the fabrication of singleelectron devices and circuits by using selective area metalorganic vapor-phase epitaxy ͑SA-MOVPE͒ on partially masked substrates. 4 -6 SA-MOVPE technology allows us to fabricate various kinds of semiconductor quantum nanostructures and their dense arrays only with one-step growth by using appropriate mask designing of the substrate. Therefore, it is possible to realize integrated circuits based on nanostructures and single-electron devices. 5 In particular, we have recently reported on quantum dot arrays and dot-wire coupled structures by utilizing a zig-zag mask pattern. 7 We also have proposed single-electron transistors ͑SETs͒ having much smaller QDs and stronger lateral confinement as compared to our conventional structures, and SET operation has partially been demonstrated.So far, our study of the transport properties of SETs fabricated by SA-MOVPE was limited to a narrow temperature region and Coulomb oscillations were observed only in a limited range of gate and source-drain voltages. In this letter, we extend our investigation to low temperature measurements. The implementation of dual-gated structures enhance the tunability of the potential of the QD and tunneling barriers. We have demonstrated clear Coulomb oscillations in a SET fabricated in combination with crystal growth and dual gates defined by lithographic techniques. Our devices have shown the possibility to explore single-electron transport and the Kondo effect, owing to strong confinement.The secondary electron microscopy ͑SEM͒ image of the present QD device is shown in Fig. 1͑a͒. For its fabrication, we first prepare a masked substrate of Fig. 1͑b͒. Starting with a SiON-coated Ga...

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Complementary digital logic based on the ‘‘Coulomb blockade’’

Cited by 360 publications

References 28 publications

A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

Area efficient digital logic NOT gate using single electron box (SEB)

Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

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