Complementary Black Phosphorus Tunneling Field-Effect Transistors

Abstract

Band-to-band tunneling field-effect transistors (TFETs) [1][2][3][4][5][6][7] have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for lowpower integration circuits and have been demonstrated to overcome the thermionic limit, that results intrinsically in subthreshold swings of at least 60 mV/dec at room temperature 1,5,6 . Here we demonstrate TFETs based on few-layer black phosphorus, in which multiple top gates create electrostatic doping in the source and drain regions. By electrically tuning the doping types and levels in the source and drain regions, the device can be reconfigured to allow for TFET or MOSFET operation and can be tuned to be n-type or p-type. Full band atomistic quantum transport simulations of the fabricated devices agree quantitatively with the I-V measurements which gives credibility to the promising simulation results of ultra-scaled phosphorene TFETs 8,9 . Using atomistic simulations, we project substantial improvements in the performance of the fabricated TFETs when channel thicknesses and oxide thicknesses are scaled down.In recent years, two-dimensional (2D) semiconducting materials have attracted attention as channel material for next-generation transistors [10][11][12][13][14][15] , as the ultra-thin body allows for ideal * Correspondence and requests for materials should be addressed to J.A.

Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing

“…As a single device, the proposed MoSe2 TFET can be used as a strain sensor, but when put together in the circuit under controlled strain conditions they lead to high-performance and low power applications. In contrast to conventional FET technology where carrier transport is due to thermionic injection, the TFETs shows weaker dependence on the temperature variations due to band-to-band tunneling based carrier injection mechanism [38]. Therefore, the response of device is tolerant to temperature variations when used in the circuits.…”

WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing

“…This is the so‐called BTBT operation. At V TGS = +3 V, the higher n‐doping level in the extended source region increases the energy window (Δ E ) for tunneling, leading to a higher BTBT current compared to that at V TGS = +1 V and the observation of SS ≈ 151 mV dec −1 , the best reported SS among all homojunction TFETs fabricated on 2D materials to the best of our knowledge . The transition from MOSFET to TFET operation is observed in all of our triple‐gate WSe 2 devices.…”

“…At V TGS = +3 V, the higher n-doping level in the extended source region increases the energy window (ΔE) for tunneling, leading to a higher BTBT current compared to that at V TGS = +1 V and the observation of SS ≈ 151 mV dec −1 , the best reported SS among all homojunction TFETs fabricated on 2D materials to the best of our knowledge. [28][29][30] The transition from MOSFET to TFET operation is observed in all of our triple-gate WSe 2 devices. Another device using a multilayer WSe 2 channel is presented in Section SV (Supporting Information), showing both n-MOSFET to n-TFET and p-MOSFET to p-TFET transitions.…”

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

“…The progressive miniaturization of electronic devices has propelled several technologies to higher performance and efficiency, but further progress and innovative solutions to global challenges require a shift from traditional approaches toward transformative material systems and integration technologies 1,2. Atomically thin layers of van der Waals (vdW) crystals and their heterostructures,3–5 generally referred to as 2D materials, offer opportunities to study and exploit quantum phenomena for a wide range of applications 6–10. These crystals have strong covalent atomic bonding in the 2D planes and weak vdW interaction between the layers, which enable the fabrication of stable thin films down to the atomic monolayer thickness and stack them into multilayered heterostructures 11–13.…”