Compensation methods for buried defects in extreme ultraviolet lithography masks

Clifford, Chris; Chan, Tina T.; Neureuther, Andrew R.

doi:10.1116/1.3531927

Cited by 19 publications

(7 citation statements)

References 6 publications

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“…An additional new phenomenon which may require a computational solutions is compensating for the lithographic impact of defects buried in the multistack mask. 59 …”

Section: Future Challengesmentioning

confidence: 97%

Challenges for patterning process models applied to large scale

Sturtevant

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Full-chip patterning simulation has been utilized in semiconductor manufacturing for more than ten years, and has been a key enabler for multiple technology generations, from 130 nm to the emerging 14 nm node. This span has featured two wavelength changes, a progression of optical NA increases (and a subsequent decrease), and a variety of patterning processes and chemistries. Full-chip patterning simulations utilize quasirigorous optical models and semiempirical resist and etch process models. There has been steady improvement in the predictive power and computational efficiency of the patterning models used in full chip simulation tools, and this paper will review this progress as well as the factors that ultimately limit the predictive capability of such models. In addition, this paper will outline the new process simulation challenges that are emerging as the industry approaches sub-0.25 k1 patterning. These challenges lie principally in improving accuracy and predictive capability, including 3D effects, for an expanding set of processes and failure modes, while maintaining or improving full chip data preparation cycle times.

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“…An additional new phenomenon which may require a computational solutions is compensating for the lithographic impact of defects buried in the multistack mask. 59 …”

Section: Future Challengesmentioning

confidence: 97%

Challenges for patterning process models applied to large scale

Sturtevant

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…11,12 As a result, defect hiding and defect compensation methods have also been proposed, [13][14][15] which work by modifying the absorber pattern to compensate the aerial image. Detailed defect information, such as the defect position on the mask, the defect size, and the phase distribution, is necessary for the compensation process.…”

Section: Introductionmentioning

confidence: 99%

Phase defect characterization on an extreme-ultraviolet blank mask using microcoherent extreme-ultraviolet scatterometry microscope

Harada¹,

Tanaka²,

Watanabe³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…EUV actinic metrology [5][6][7][8][9][10][11] is required to evaluate the actinic feature of defect printability and the critical dimension (CD). In addition, an EUV image depends on the incidence angle to the mask because an absorber causes shadows and reflections of EUV at the 3D sidewall structure.…”

Section: Introductionmentioning

confidence: 99%

Extreme ultraviolet mask observations using a coherent extreme ultraviolet scatterometry microscope with a high-harmonic-generation source

Fujino

Tanaka

Harada

et al. 2015

Jpn. J. Appl. Phys.

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In extreme ultraviolet (EUV) lithography, the three-dimensional structure of an EUV mask, which has an absorber layer and a Mo/Si multilayer on a glass substrate, strongly affects the EUV phase. We have developed a coherent EUV scatterometry microscope (CSM) to observe EUV patterns with a quantitative phase contrast based on the coherent-diffraction-imaging method, which is a simple system without an objective. A coherent stand-alone high-harmonic-generation (HHG) EUV source has been developed for practical use. Although the throughput of the relay optics in the previous study was insufficient to compensate for the fluctuation of the beam position, herein the beam position is stabilized and the relay optics are upgraded, increasing the throughput of the EUV power 130-fold. Consequently, the detection time for the same defect size is markedly reduced from 1000 to 1 s. Furthermore, a 52 ' 52 nm 2 absorber defect is detected in 10 s.

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Compensation methods for buried defects in extreme ultraviolet lithography masks

Cited by 19 publications

References 6 publications

Challenges for patterning process models applied to large scale

Challenges for patterning process models applied to large scale

Phase defect characterization on an extreme-ultraviolet blank mask using microcoherent extreme-ultraviolet scatterometry microscope

Extreme ultraviolet mask observations using a coherent extreme ultraviolet scatterometry microscope with a high-harmonic-generation source

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