Compensation for volatile elements to modify the microstructure and energy storage performance of (W,Ni)-codoped Na0.5Bi0.5TiO3 ceramic films

Han, Ya-jie; Wang, Y.Z.; Yang, Changhong; Yao, Qian; Chen, J.; Huang, Shifeng

doi:10.1016/j.ceramint.2018.05.153

Cited by 14 publications

(1 citation statement)

References 28 publications

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“…For each composition, the current density shows a clear increasing trend with the growth of the electric field. To some extent, this behavior may be connected with the more free oxygen vacancies released by the Mg Ti ″-V O •• defect dipoles at a high electric field [43]. The leakage current density at 150 kV/cm first decreases as the BMT concentration increases from 0.3 to 0.5 and then increases significantly at a BMT content of 0.6.…”

Section: Table1mentioning

confidence: 99%

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 Relaxor Ferroelectric Thin Films

Yan

Song

Zhu

et al. 2021

Preprint

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In this work, lead-free (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 (abbreviated as BNBT-xBMT, x = 0.3, 0.4, 0.5 and 0.6) thin films were prepared on Pt/Ti/SiO2/Si substrates using sol-gel method. The microstructures, dielectric and energy storage properties were investigated. The results showed that the addition of BMT disrupted the long-range ferroelectric order and enhanced the relaxor behavior of BNBT-xBMT thin films. In addition, the leakage current density of thin films was also reduced by the doping of moderate amount of BMT. A high recoverable energy density of 34.36 J/cm3 with an efficiency of 56.63% was achieved in the BNBT-0.5BMT thin film under the electric field of 2149 kV/cm. Furthermore, BNBT-0.5BMT thin film exhibited superior stability in the temperature range of 30°C − 145°C and frequency range of 500 Hz − 5 kHz, as well as long-term fatigue durability after 1 × 105 cycles. These results suggest that BNBT-0.5BMT thin film may be a promising material for lead-free dielectric energy storage applications.

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Section: Table1mentioning

confidence: 99%

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 Relaxor Ferroelectric Thin Films

Yan

Song

Zhu

et al. 2021

Preprint

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Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics

Sun

Wang

Tian

et al. 2019

Adv Elect Materials

197

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and Technology. His research direction is electronic functional materials, including designing and exploiting piezoelectrics, ferroelectrics, and pyroelectrics. Ge Wang is currently working as a PDRA in functional materials and devices group at the University of Sheffield, UK. He obtained his Ph.D. from the University of Manchester in 2017 then moved to the University of Sheffield. His research interests include dielectric ceramic capacitors, piezoelectrics, solid oxide fuel cells, and Li batteries.

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Achieved high energy density and excellent thermal stability in (1−x)(Bi0.5Na0.5)0.94Ba0.06TiO3−xBi(Mg0.5Ti0.5)O3 relaxor ferroelectric thin films

Yan

Song

Zhu

et al. 2021

J Mater Sci: Mater Electron

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Compensation for volatile elements to modify the microstructure and energy storage performance of (W,Ni)-codoped Na0.5Bi0.5TiO3 ceramic films

Cited by 14 publications

References 28 publications

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 Relaxor Ferroelectric Thin Films

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 Relaxor Ferroelectric Thin Films

Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics

Achieved high energy density and excellent thermal stability in (1−x)(Bi0.5Na0.5)0.94Ba0.06TiO3−xBi(Mg0.5Ti0.5)O3 relaxor ferroelectric thin films

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Compensation for volatile elements to modify the microstructure and energy storage performance of (W,Ni)-codoped Na0.5Bi0.5TiO3 ceramic films

Cited by 14 publications

References 28 publications

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3&nbsp;Relaxor Ferroelectric Thin Films

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3&nbsp;Relaxor Ferroelectric Thin Films

Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics

Achieved high energy density and excellent thermal stability in (1−x)(Bi0.5Na0.5)0.94Ba0.06TiO3−xBi(Mg0.5Ti0.5)O3 relaxor ferroelectric thin films

Contact Info

Product

Resources

About

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 Relaxor Ferroelectric Thin Films

Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 Relaxor Ferroelectric Thin Films