Achieved high energy density and excellent thermal stability in (1−x)(Bi0.5Na0.5)0.94Ba0.06TiO3−xBi(Mg0.5Ti0.5)O3 relaxor ferroelectric thin films

Yan, Hao; Song, Baijie; Zhu, Kun; Xu, Liuxue; Shen, Bo; Zhai, Jiwei

doi:10.1007/s10854-021-06174-0

Cited by 5 publications

(2 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The PZ films annealed at 620 °C for 3 min showed the dense structures with tiny black dots, indicating that the PZ films had a small amount of perovskite phase (black dots). [22,25,26] However, the black dots became large and obvious when the PZ films were annealed at 620 °C for 6 min, indicating that the content of perovskite phase increased with the increase of annealing time.…”

Section: Resultsmentioning

confidence: 99%

Energy Storage Performance of PZT/PZ Composite Films Obtained by Sol–Gel Method

Yang

Yuan

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

PbZr0.52Ti0.48O3(PZT)/PbZrO3(PZ) composite films are deposited on LaNiO3/SiO2/Si substrates using sol–gel method, and annealed at 620 °C for a different time with the rapid thermal annealing technology. The microstructures, crystal structure, and electrical performance of the PZT/PZ composite films are researched. When the composite films are annealed at 620 °C for 3 min, the PZT films show the perovskite phase and the PZ films exhibit the pyrochlore phase with tiny perovskite phase, making the films obtain a linear hysteresis loop and possess the high energy storage density of 10.0 J cm−3 and the energy storage efficiency of 84.8%. The aforementioned experimental results show that the phase structure of the PZT/PZ multilayer films can be regulated by different annealing times, which would improve the energy storage performance.

show abstract

Section: Resultsmentioning

confidence: 99%

Energy Storage Performance of PZT/PZ Composite Films Obtained by Sol–Gel Method

Yang

Yuan

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Surprisingly, the dielectric constant of the films tends to remain stable at a certain frequency for films annealed at other temperatures. This phenomenon can be attributed to the presence of defects in the PZT/PZ multilayer films, which result in different polarization factors and different response frequencies [12,35,36,39]. The dielectric constant at 1 kHz is 118, 127, 155, 212, 274 and 540 for the samples annealed at 450 °C, 500 °C, 550 °C, 570 °C, 600 °C and 650 °C, respectively.…”

Section: Dielectric and Leakage Current Density Propertiesmentioning

confidence: 99%

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

Yang,

Chen,

Hou

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

In this study, PbZr0.52Ti0.48O3/PbZrO3 (PZT/PZ) multilayer films were prepared on SiO2/Si substrate buffered with LaNiO3 (LNO) thin films, and then annealed at different temperatures by rapid thermal annealing (RTA) technology. The phase structures, microstructures, and electrical properties of the obtained PZT/PZ multilayer films were studied. According to the results of XRD and SEM, it was found that the PZ films with perovskite phase were obtained by annealing at 650 °C firstly. The PZT films on crystallized PZ films were in amorphous phase after annealing at 450 °C, in pyrochlore phase after annealing at 550 °C, and finally in perovskite phase at annealing temperature higher than 600 °C. The multilayer films with the PZT films annealed at 550 °C exhibited linear hysteresis loops, and such films showed the enhanced energy storage density of 31.6 J cm−3 and the energy storage efficiency of 66.9% at a high breakdown field strength of 2475 kV cm−1. The experimental results proved that the phase structure of the PZT/PZ multilayer films can be regulated by different annealing temperatures, which could further enhance the energy storage performance of the PZT/PZ multilayer films.

show abstract