Compendium of Recent Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

“…However, as other authors have reported SEUs with protons and heavy ions [5], [6], it was likely that SEUs appeared at low values of bias voltage since there is evidence that, at least in bulk CMOS memories, the cross section exponentially grows as the bias voltage approaches the minimum value [17]. Our results provide hints of this dependence on the bias voltage values near 0.65 V but by no means as dramatical as in bulk CMOS memories.…”

“…Therefore, in spite of the fact of lacking information about the physical SRAM structure, the authors believe that they must be classified as SEUs, kind of event already observed by other authors [5], [6].…”

“…To the authors' knowledge, the first independent tests under radiation on A-LPSRAMs were performed at the NASA GSFC to investigate heavy ion effects [6]. Recently, the behavior of these memories under very energetic protons has been explored in order to propose its use in the CERN LHC upgrade [5].…”

Neutron-Induced Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage

“…However, as other authors have reported SEUs with protons and heavy ions [3], [4], it was likely that SEUs appeared at low values of bias voltage since there is evidence that, at least in bulk CMOS memories, the cross section exponentially grows as the bias voltage approaches the minimum value [10]. Our results show that, indeed, there is an increase in the cross section as the bias voltage gets closer to 0.65 V but, apparently, this growth is not as dramatical as in other memories.…”

“…To the authors' knowledge, the first independent tests on A-LPSRAMs under radiation were performed at the NASA GSFC to investigate heavy ion effects [3]. Recently, the behavior of these memories under very energetic protons has been explored in order to propose its use in the CERN LHC upgrade [4].…”