Comparison study on performances and robustness between SiC MOSFET &amp; JFET devices – Abilities for aeronautics application

Othman, Dhouha; Berkani, Mounira; Lefebvre, Stéphane; Ibrahim, Ali; Khatir, Zoubir; Bouzourene, A.

doi:10.1016/j.microrel.2012.06.078

Cited by 43 publications

(24 citation statements)

References 7 publications

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“…Short circuit withstand capability is challenging for tiny and fast SiC devices [68]- [71]. Compared with traditional Si devices with > 10 µs short circuit withstand time, the typical short circuit withstand time of SiC MOSFETs is on the order of 1 µs.…”

Section: ) Enhanced Short-circuit Withstand Capabilitymentioning

confidence: 99%

“…From thermal standpoint, SiC MOSFETs tend to have lower short circuit withstand capability, compared with Si IGBTs and MOSFETs, due to smaller chip area and higher current density [68]- [71]. The lower short circuit withstand capability requires a faster response time of the protection circuit to guarantee SiC MOSFETs operating within the safe operating areas (SOA).…”

Section: Protectionmentioning

confidence: 99%

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Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Wang¹,

Zhang²

2016

CPSS TPEA

158

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Section: ) Enhanced Short-circuit Withstand Capabilitymentioning

confidence: 99%

Section: Protectionmentioning

confidence: 99%

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Wang¹,

Zhang²

2016

CPSS TPEA

158

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“…The switching characteristics of SiC MOSFETs were investigated in [7,8], but the impact of temperature was not considered. The relationship between dV DS /dt and temperature for SiC MOSFET can be observed in some published reports [9][10][11][12][13][14]. In [9] and [14], the characterization and comparison of three types of 1.2 kV SiC MOSFETs produced by different manufacturers is presented at 25 • C and 175 • C. Similar measurements have also been performed in [10,11].…”

Section: Introductionmentioning

confidence: 73%

“…The impact of temperature is clear and the magnitude of dVDS/dt decreases as temperature increases for turn-off, but increases with increasing temperature for turn-on. Othman et al [11] experimentally showed the temperaturesensitivity of turn-off dVDS/dt is very low and approximately constant under 400 V, 15 A, and 28 Ω gate resistance test conditions. When temperature ranges from 25 °C up to 175 °C, the value of dVDS/dt is approximately 10.44 V/ns.…”

Section: Discussionmentioning

confidence: 99%

“…The relationship between dV DS /dt and temperature for SiC MOSFET can be observed in some published reports [9][10][11][12][13][14]. In [9] and [14], the characterization and comparison of three types of 1.2 kV SiC MOSFETs produced by different manufacturers is presented at 25 • C and 175 • C. Similar measurements have also been performed in [10,11]. In [12], a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated at the temperatures of 25 • C and 125 • C. In reference [13], a behavioral model of SiC MOSFET in Pspice over a wide temperature range is provided.…”

Section: Introductionmentioning

confidence: 91%

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Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Liao

et al. 2017

Energies

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Due to our limited knowledge about silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dV DS /dt) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. Turn-off variation in voltage is not a strong function of temperature, whereas the turn-on variation in voltage has a monotonic relationship with temperature. The temperature dependence is a result of the competing effects between the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in SiC MOSFETs. The relationship between variation in voltage and supply voltage, load current, and gate resistance are also discussed. A temperature-based analytical model of dV DS /dt for SiC MOSFETs was derived in terms of internal parasitic capacitances during the charging and discharging processes at the voltage fall period during turn-on, and the rise period during turn-off. The calculation results were close to the experimental measurements. These results provide a potential junction temperature estimation approach for SiC MOSFETs. In SiC MOSFET-based practical applications, if the turn on dV DS /dt is sensed, the device temperature can be estimated from the relationship curve of turn on dV DS /dt versus temperature drawn in advance.

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High Efficiency DC/AC/DC Converter Based on Synchronous Rectifier for Proton Exchange Membrane Fuel Cells

2016

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This paper deals with the efficiency improvement of a DC/AC/DC converter used for proton exchange membrane fuel cell (PEMFC) coupling to an electrical vehicle DC bus. The power converter is based on a MOSFET inverter stage, a high frequency planar technology transformer stage and a full bridge diode rectifier output stage. The diode rectifier is a source of losses due to the diode forward voltage, which may be reduced by implementation of synchronous rectifier technology, especially for high output current. Mosfets with low drain‐to‐source on‐resistance are coupled to the diodes to reduce the losses. Control principle of this converter is presented with losses modeling and efficiency study in order to highlight the advantages of the synchronous rectification. Efficiency improvement is quantified from a comparison study with technological choices including silicon carbide (SiC) MOSFET and Schottky diodes. This study points out that the synchronous rectification becomes really relevant for an actual scale‐1 application and not for our reduced scale laboratory power converter. Finally, experimental validation of the control is presented with our laboratory test bench. The realization of a scale‐1 converter is under study to experimentally validate the advantages of the proposed synchronous rectification.

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Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application

Cited by 43 publications

References 7 publications

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

High Efficiency DC/AC/DC Converter Based on Synchronous Rectifier for Proton Exchange Membrane Fuel Cells

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