Comparison of ZrxTi1−xO4 films produced by PLD and MOCVD techniques

Kačiulis, S.; Cusmà, A.; Padeletti, G.; Pandolfi, L.; Viticoli, M.; Zaldo, C.

doi:10.1002/sia.1863

Cited by 2 publications

(3 citation statements)

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“…XRD studies of this sample have demonstrated 2 that at this temperature no nucleation of the ZrTiO 4 thin films is obtained and the phases present in the film are TiO 2 and Ti 2 ZrO 6 . At the depth of 40 nm, the ratio 4 Sugiyama et al 5 have studied the crystalline phase of the lead zirconium titanate (PZT) thin films from the analysis of the Zr 3d peak. They have found that an additional peak at higher binding energy in the Zr 3d spectrum is present and its intensity changes when the PZT is deposited in different phases.…”

Section: Xps Resultsmentioning

confidence: 99%

“…The substrate was placed on a ceramic heater mounted on a manipulator in the reaction chamber. Titanium iso-propoxide Ti[OCH CH 3 2 ] 4 , zirconium tetra-butoxide Zr[OC CH 3 3 ] 4 and oxygen were used as the Zr and Ti sources, and oxidant, respectively. ZT films were deposited at different substrate temperatures (500-700°C), maintaining the deposition pressure at 3.5 Torr.…”

Section: Methodsmentioning

confidence: 99%

“…In the sample, grown at T sub D 500°C, the main phase is the ZrTiO 4 , with a strong texture of the (220) crystallographic planes. Increasing the substrate temperature to 600°C, the main phase remains ZrTiO 4 , but the growth is preferential in the direction of (031) planes.…”

Section: Xrdmentioning

confidence: 99%

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Deposition and characterization of ZrTiO₄ thin films

Pandolfi

Kačiulis

Padeletti

et al. 2004

Surface & Interface Analysis

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Thin films of zirconium titanate ZrTiO 4 (ZT) were prepared by the MOCVD technique. ZT layers were deposited in air on silicon substrates by using a non-conventional MOCVD system. The chemical composition of these films was investigated by XPS. More information on the thin film structure was obtained from the study of the Zr 3d XPS signal. The temperature of the substrate was found to be a fundamental parameter determining the stoichiometry of the films. It influences also the ordered or disordered structure of the films produced. In addition, the surface roughness of the samples before and after Ar + ion sputtering was investigated.

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Section: Xps Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%