Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO2/Si substrate

Antonova, I. V.; Golod, S. V.; Soots, Regina A.; Komonov, A. I.; Селезнев, В. Д.; Sergeev, M. V.; Володин, В. А.; Prinz, V. Ya.

doi:10.1134/s1063782614060049

Cited by 15 publications

(2 citation statements)

References 16 publications

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“…They are stable under ambient conditions [1]. Since their original discovery, various different methods have been reported for transfer-free synthesis (including etch precipitation, conventional or plasma enhanced CVD, dual flame methods, ion implantation) of FLG films supported on SiO 2 substrates [109][110][111][112][113][114][115][116][117], as well as for transfer onto a SiO 2 substrate [1,[118][119][120][121]. In these experimental studies, the SiO 2 substrate is often of hundreds of nm thick and is itself supported on a thick Si wafer.…”

Section: Metals On Few-layer-graphene (Flg) On Sio 2 /Simentioning

confidence: 99%

Growth morphology and properties of metals on graphene

Liu

Han

Evans

et al. 2015

Progress in Surface Science

142

125

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a b s t r a c tGraphene, a single atomic layer of graphite, has been the focus of recent intensive studies due to its novel electronic and structural properties. Metals grown on graphene also have been of interest because of their potential use as metal contacts in graphene devices, for spintronics applications, and for catalysis. All of these applications require good understanding and control of the metal growth morphology, which in part reflects the strength of the metal-graphene bond. Also of importance is whether the interaction between graphene and metal is sufficiently strong to modify the electronic structure of graphene. In this review, we will discuss recent experimental and computational studies related to deposition of metals on graphene supported on various substrates (SiC, SiO 2 , and hexagonal close-packed metal surfaces). Of specific interest are the metal-graphene interactions (adsorption energies and diffusion barriers of metal adatoms), and the crystal structures and thermal stability of the metal nanoclusters.

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Section: Metals On Few-layer-graphene (Flg) On Sio 2 /Simentioning

confidence: 99%

Growth morphology and properties of metals on graphene

Liu

Han

Evans

et al. 2015

Progress in Surface Science

142

125

View full text Add to dashboard Cite

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“…Researchers have addressed this problem by using smaller molecular weight PMMA [2], by oxygen environment burning [8], or by plasma treatment [7]. A more fundamental remedy to the residue problem has been to find alternative transfer methods, using other polymers [4,[9][10][11] or metals [12,13].…”

Section: Introductionmentioning

confidence: 99%

Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment

et al. 2016

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The doping effect on graphene by photoresists were studied in this article. Polymethyl methacrylate (PMMA) is the usual choice for graphene transfer, but it is known to leave a significant amount of residue. PMMA results in strong hole doping and reduction of mobility of the graphene devices. Not only PMMA, but photoresists also leave residues during the lithographic steps and dope the graphene in strong hole-doping states along with water and oxygen molecules. In this article, we tested three types of photoresists for their effects on graphene's electrical properties. It was found that a specific photoresist can significantly reduce the amount of hole-doping of the graphene transistor more than other photoresists. The use of hydrophobic substrates and additional thermal treatment can help reducing the hole-doping further.

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