Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment

Sul, Onejae; Kim, Kyumin; Choi, Eunseok; Kil, Joonpyo; Park, Wanjun; Lee, Seung‐Beck

doi:10.1088/0957-4484/27/50/505205

Cited by 24 publications

(16 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The main challenge in the graphene-based optoelectronic devices is fabrication of graphene junctions , required to facilitate photovoltaic or thermoelectric effects. One of the most promising ways of local energy profile engineering in graphene structures is the generation of quantum confinement in graphene, such as nanoribbons, nanomeshes, or nanodots. , However, these techniques demand unconventional lithographic methods and chemical processing that increase the cost of the process and greatly alter the properties of untreated graphene . High energy exposure methods, such as plasma treatment, typically result in controllable defect generation in graphene lattice, resulting in an effective separation of photoinduced charge carriers .…”

mentioning

confidence: 99%

“…13,14 However, these techniques demand unconventional lithographic methods and chemical processing that increase the cost of the process and greatly alter the properties of untreated graphene. 15 High energy exposure methods, such as plasma treatment, typically result in controllable defect generation in graphene lattice, resulting in an effective separation of photoinduced charge carriers. 16 The fabrication still includes preliminary mask patterning of the device.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions

et al. 2018

View full text Add to dashboard Cite

Single and few-layer graphene photodetectors have attracted much attention in the past few years. Pristine graphene shows a very weak response to visible light; hence, fabrication of complex graphene-based detectors is a challenging task. In this work, we utilize the ultrafast laser functionalization of single-layer CVD graphene for highly desirable maskless fabrication of micro- and nanoscale devices. We investigate the optoelectronic response of pristine and functionalized devices under femtosecond and continuous wave lasers irradiation. We demonstrate that the photocurrent generation in p–p+ junctions formed in single-layer graphene is related to the photothermoelectric effect. The photoresponsivity of our laser patterned single-layer graphene junctions is shown to be as high as 100 mA/W with noise equivalent power less than 6 kW/cm2. These results open a path to a low-cost maskless technology for fabrication of graphene-based optoelectronic devices with tunable properties for spectroscopy, signal processing, and other applications.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions

et al. 2018

View full text Add to dashboard Cite

show abstract

“…The graphene patterns have been controlled by defining the metal patterns. , Our method does not involve metals; therefore, there is no risk of metal contamination during high-temperature growth . A photoresist is a type of organic compound that is a heavy p-type dopant of graphene . The lithography-free growth of graphene aims at avoiding direct contact between the graphene and photoresist to ensure the stability of graphene’s electrical properties.…”

Section: Resultsmentioning

confidence: 99%

“…23 A photoresist is a type of organic compound that is a heavy p-type dopant of graphene. 24 The lithography-free growth of graphene aims at avoiding direct contact between the graphene and photoresist to ensure the stability of graphene's electrical properties.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Metal-Catalyst-Free Growth of Patterned Graphene on SiO₂ Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

Dong

Cheng

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

A metal-catalyst-free method for the direct growth of patterned graphene on an insulating substrate is reported in this paper. Parylene N is used as the carbon source. The surface molecule layer of parylene N is cross-linked by argon plasma bombardment. Under high-temperature annealing, the crosslinking layer of parylene N is graphitized into nanocrystalline graphene, which is a process that transforms organic to inorganic and insulation to conduction, while the parylene N molecules below the cross-linking layer decompose and vaporize at high temperature. Using this technique, the direct growth of a graphene film in a large area and with good uniformity is achieved. The thickness of the graphene is determined by the thickness of the cross-linking layer. Patterned graphene films can be obtained directly by controlling the patterns of the crosslinking region (lithography-free patterning). Graphene−silicon Schottky junction photodetectors are fabricated using the asgrown graphene. The Schottky junction shows good performance. The application of direct-grown graphene in optoelectronics is achieved with a great improvement of the device fabrication efficiency compared with transferred graphene. When illuminated with a 792 nm laser, the responsivity and specific detectivity of the detector measured at room temperature are 275.9 mA/W and 4.93 × 10 9 cm Hz 1/2 /W, respectively.

show abstract

“…For example, Lu [85] et al simulated the doping of tetracyanoethylene (TCNE) organic molecules for graphene and obtained several stable adsorption mode as well as effective modulation of the bandgap and conductive type of the single and double-layer graphene. There are other molecules [86,87] that can be used as absorption dopants as previously studied by some groups. Indeed organic molecule doping has obvious doping effect and can effectively regulate the electrical properties of graphene, but there are some stability issues when using organic molecule especially at high temperature.…”

Section: Physical Methods Preparation Of P-type Graphenementioning

confidence: 99%

Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

Tian

Tang

Teng

et al. 2019

Adv Materials Technologies

View full text Add to dashboard Cite

Graphene has been widely used as electrodes and active layers in optoelectronics due to its diverse excellent performances, such as high mobility, large thermal conductivity and high specific surface area etc. Methodology for constructing p-n junction has becoming an important consideration in improving the performance of optoelectronic devices and broadening of its application in related fields. Currently, graphene based p-n junction has been explored and different structures have also been investigated. This review paper summaries the recent progress on graphene homogeneous p-n junction, ranging from preparation of front-end materials (e.g. p-and n-type graphene) to building of planar and vertical p-n junctions. Furthermore, p-n junction via electrical modulation is described. The requirements for building the graphene homogeneous p-n junction, and the advantages and drawbacks of the different structures of the p-n junction are also discussed. Finally, a preferential technique to fabricate high performance p-and n-type graphene and building of the p-n junction is evaluated. This paper therefore provides an important indication on the future direction on the application of graphene in optoelectronics. 2 ranging applications, such as logical rectifier circuit [10,11] , field-effect optoelectronic transistor [12-14] , multimode non-volatile memory [15] , rectifier memory [16,17] , optoelectronic storage [18,19] , photovoltaic device [20] , photodetector [21,22] and gas sensor [23,24] etc. Consequently, it is obvious to study new material system for the p-n junction that will enhance the performance of current devices and also lead to the development of new devices. In general, p-n junction can be categorized into heterojunction and homojunction. If same materials are used, the p-n junction is known as homogeneous junction or homojunction. There are many advantages of homogeneous p-n junction, for example, there is no issue on lattice mismatch, which will result in surface defects, since p and n layers are of the same materials. Moreover, the use of the same materials in homogeneous p-n junction leads to uniform energy band gap across the device structure, as shown in Figure 1a. Depletion region is formed at the junction between p and n regions, and the alignment of Fermi level (E f) promotes band bending at the depletion region when the same semiconducting materials are used to construct the p-n junction, as represented in Figure 1b. Such homogeneous p-n junction is of great significance in the field of optoelectronics. Figure 1c illustrates the charge transport mechanism under illumination. Upon radiation of light with certain wavelength (hυ ≧ Eg), electrons jump to conduction band in p, n and depletion regions. These electrons and holes arriving at the depletion region are subsequently swept into n-type and p-type regions respectively via the built-in field. As a result, current is generated and a certain voltage is produced due to the accumulation of charges under open circuit conditions. Furthermore, this lead...

show abstract

Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment

Cited by 24 publications

References 33 publications

Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions

Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions

Metal-Catalyst-Free Growth of Patterned Graphene on SiO₂ Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

Contact Info

Product

Resources

About

Reduction of hole doping of chemical vapor deposition grown graphene by photoresist selection and thermal treatment

Cited by 24 publications

References 33 publications

Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions

Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions

Metal-Catalyst-Free Growth of Patterned Graphene on SiO2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics

Contact Info

Product

Resources

About

Metal-Catalyst-Free Growth of Patterned Graphene on SiO₂ Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications