Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Boukhayma, Assim; Kraxner, Andrea; Caizzone, Antonino; MinhaoYang,; Bold, Daniel; Enz, Christian

doi:10.1109/jeds.2022.3200520

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…Its sub-electron noise and high sensitivity allows for short integration times, for very low signals and this, without compromising the dynamic range. [20] The imager exploits an array of 5T pixels based on dual gate pinned-photodiodes paired with an optimized sense node doping profile and a low noise in-pixel source follower design. This, together with column level amplification and double sampling, ensures sub-electron read noise.…”

Section: Experimental Methodsmentioning

confidence: 99%

Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications

Bernard¹,

Kraxner²,

Boukhayma³

et al. 2023

Preprint

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During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying suitable laser process parameters for a given substrate remains a tedious, time-consuming task. Using a single laser source for both processing and monitoring, we demonstrate a method based on in situ full-field THG microscopy that exploits the properties of a low-noise CMOS imager to rapidly identify the entire processing space, discriminating different types of laser-induced modifications, and extracting incubation laws governing the laser exposure process. Furthermore, we show that full-field THG monitoring is capable of identifying parameters leading to enhanced functional properties, such as laser-enhanced etching selectivity. These findings enable accelerated implementations of laser processes of arbitrarily-chosen transparent materials and, thanks to the rapid acquisition time (> 100 FPS) of the imager, closed-loop process control.

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Section: Experimental Methodsmentioning

confidence: 99%

Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications

Bernard¹,

Kraxner²,

Boukhayma³

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…Concerns may arise regarding the increased flicker noise caused by smaller gate geometries. As mentioned in Boukhayma et al [ 23 ], the smaller SF gate enhances the conversion gain and reduces input-referred noise, particularly when a fast CDS circuit is utilized. Another concern might be the potential occurrence of the hot electron effect in the absence of lightly doped drain (LDD) regions.…”

Section: Pixel Core Designmentioning

confidence: 99%

Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

Yue

Fossum

2023

Sensors

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This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized.

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Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications

Bernard

Kraxner

Boukhayma

et al. 2023

Optica

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During the last two decades, ultrafast in-volume laser-based processing of transparent materials has emerged as a key 3D-printing method for manufacturing a variety of complex integrated photonic devices and micro-parts. Yet, identifying suitable laser process parameters for a given substrate remains a tedious, time-consuming task. Using a single laser source for both processing and monitoring, we demonstrate a method based on in situ full-field third-harmonic generation (THG) microscopy that exploits the properties of a low-noise CMOS imager to rapidly identify the entire processing space, discriminating different types of laser-induced modifications, and extracting incubation laws governing the laser exposure process. Furthermore, we show that full-field THG monitoring is capable of identifying parameters leading to enhanced functional properties, such as laser-enhanced etching selectivity. These findings enable accelerated implementations of laser processes of arbitrarily chosen transparent materials and, due to the rapid acquisition time (>100FPS) of the imager, closed-loop process control.

show abstract

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Cited by 3 publications

References 22 publications

Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications

Third-harmonic generation monitoring of femtosecond laser-induced in-volume functional modifications

Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications

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