Comparison of tungsten and nickel oxideelectrochromism in single films and in all-solid-state devices

Ottermann, C.; Temmink, A.; Bange, K.

doi:10.1016/s0040-6090(05)80051-3

Cited by 34 publications

(6 citation statements)

References 4 publications

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“…Ottermann et al [29] claimed a correlation of linear dependence between the increase of W 5+ and the intercalation coefficient a i (H a i WO 3Àz ) for a i o0.25. For a i 40.3, the spectra are more complicated since a third binding state appears, presumably W 4+ .…”

Section: Surface Compositions Oxygen Deficiency and Electrochromic Pmentioning

confidence: 99%

Electrochromic properties of novel atmospheric pressure plasma jet-synthesized-organotungsten oxide films for flexible electrochromic devices

Lin

Tsai

2010

Solar Energy Materials and Solar Cells

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Section: Surface Compositions Oxygen Deficiency and Electrochromic Pmentioning

confidence: 99%

Electrochromic properties of novel atmospheric pressure plasma jet-synthesized-organotungsten oxide films for flexible electrochromic devices

Lin

Tsai

2010

Solar Energy Materials and Solar Cells

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“…Nickel oxide has excellent chemical stability with a wide band gap in the range 3.6-4.0 eV [24]. Various processes were attempted to synthesize NiO thin films including sputtering [25,26], electron beam evaporation [27,28], and the sol-gel technique [29], etc. If the NiO films were defect free (i.e.…”

Section: Introductionmentioning

confidence: 99%

Enhanced p-type conductivity and band gap narrowing in heavily Al doped NiO thin films deposited by RF magnetron sputtering

Nandy

Maiti

Ghosh

et al. 2009

J. Phys.: Condens. Matter

137

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Stoichiometric NiO, a Mott-Hubbard insulator at room temperature, shows p-type electrical conduction due to the introduction of Ni(2+) vacancies (V(Ni)('')) and self-doping of Ni(3+) ions in the presence of excess oxygen. The electrical conductivity of this important material is low and not sufficient for active device fabrication. Al doped NiO thin films were synthesized by radio frequency (RF) magnetron sputtering on glass substrates at a substrate temperature of 250 °C in an oxygen + argon atmosphere in order to enhance the p-type electrical conductivity. X-ray diffraction studies confirmed the correct phase formation and also oriented growth of NiO thin films. Al doping was confirmed by x-ray photoelectron spectroscopic studies. The structural, electrical and optical properties of the films were investigated as a function of Al doping (0-4 wt%) in the target. The room temperature electrical conductivity increased from 0.01-0.32 S cm (-1) for 0-4% Al doping. With increasing Al doping, above the Mott critical carrier density, energy band gap shrinkage was observed. This was explained by the shift of the band edges due to the existence of exchange and correlation energies amongst the electron-electron and hole-hole systems and also by the interaction between the impurity quasi-particle system.

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“…The optical absorption is caused by small polaron transitions between two adjacent non‐equivalent sites of tungsten (${\rm W}_{4{\rm f}5/2}^{5 + }$ and ${\rm W}_{4{\rm f}7/2}^{6 + }$ ) as given in Equation (5):11 Figure 4(b) shows the compositions of ${\rm W}_{4{\rm f}5/2}^{5 + }$ (38.03 eV) and ${\rm W}_{4{\rm f}7/2}^{6 + }$ (35.85 eV) were 42 and 58%, respectively. Ottermann et al reported a correlation of linear dependence between the increase of ${\rm W}_{4{\rm f}5/2}^{5 + }$ and the insertion coefficient x (H x WO 3‐ z ) for x <0.25 12. In this study, the insertion coefficient x (Li x WO 3‐ z ) of the FECD was found to be 0.14–0.15 for 200 cycles of ion insertion and extraction in a 0.1 M LiClO 4 ‐PC electrolyte.…”

Section: Resultsmentioning

confidence: 99%

Reactive Sputtering Deposition of a-WO3-z on Flexible PET/ITO Substrates for Electrochromic Devices

Lin

Chiang

2007

Plasma Process. Polym.

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The deposition of electrochromic thin films of a‐WO3‐z (amorphous tungsten oxide) on flexible PET (polyethylene terephthalate)/ITO (indium tin oxide) substrates by a reactive radio frequency (r.f.) sputtering method was investigated. The method used argon and oxygen at room temperature (23 °C). Cyclic voltammetry measurements showed that only low driving voltages −1 and +1 V were needed to provide reversible Li+ ion insertion and extraction. Cyclic potentiostatic switching and visible–UV spectroscopy showed that thin films with oxygen deficiency z of 0.22 can offer excellent light modulation, with up to 62% transmittance variation and color efficiency of 61.3 cm2 · C−1.

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Comparison of tungsten and nickel oxideelectrochromism in single films and in all-solid-state devices

Cited by 34 publications

References 4 publications

Electrochromic properties of novel atmospheric pressure plasma jet-synthesized-organotungsten oxide films for flexible electrochromic devices

Electrochromic properties of novel atmospheric pressure plasma jet-synthesized-organotungsten oxide films for flexible electrochromic devices

Enhanced p-type conductivity and band gap narrowing in heavily Al doped NiO thin films deposited by RF magnetron sputtering

Reactive Sputtering Deposition of a-WO3-z on Flexible PET/ITO Substrates for Electrochromic Devices

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