Comparison of TiN Films Deposited Using Tetrakisdimethylaminotitanium and Tetrakisdiethylaminotitanium by the Atomic Layer Deposition Method

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

“…However, such halide-based precursors generally result in clogged gas lines, equipment corrosion, and very low growth rates. Kim et al [14] compared tetrakis (dimethylamido) titanium (TDMAT) and tetrakis (diethylamido) titanium (TDEAT) as the titanium precursors for thermal ALD of TiN. The resulting TiN films were found to have relatively low carbon contamination, and low resistivities, below 1000 µΩ cm.…”

“…The resulting TiN films were found to have relatively low carbon contamination, and low resistivities, below 1000 µΩ cm. Films grown using TDEAT as the precursor had lower resistivities but required a higher ALD process temperature and had slower growth rates, 0.1 nm/cycle than those grown with TDMAT, 0.5 nm/cycle [14]. Plasma-enhanced ALD (PE-ALD) can be utilized to lower the temperature of deposition.…”

Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

“…However, growth rates are low and the hydrochloric acid (HCl) byproduct may cause selfetching [7], copper pitting [4][5] and/or reactive site poisoning [5,7]. The drawbacks of using TiCl 4 precursor has lead to research into metalorganic precursors like tetrakis(dimethylamido)titanium (TDMAT) [8][9], tetrakis(ethylmethylamido)titanium (TEMAT) [8], and tetrakis(diethylamido)titanium (TDEAT) [8,10]. Although TDMAT produces films at a higher deposition rate and with lower resistivity, there is higher carbon content in the film at higher temperatures from the decomposition of TDMAT [8].…”

“…Although TDMAT produces films at a higher deposition rate and with lower resistivity, there is higher carbon content in the film at higher temperatures from the decomposition of TDMAT [8]. TDEAT offers better precursor thermal stability and lower carbon incorporation [10], but the deposition rate is much lower and would require high substrate temperatures. TEMAT typically gives film quality and properties between those of TDMAT and TDEAT, allowing a more balanced approach to depositing TiN.…”

Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique

“…Nevertheless, the use of inorganic precursors has the potential problem of corrosive Cl incorporation into the film. To solve this, amide metallorganic precursors, such as tetrakis–dimethyl–amino–titanium, tetrakis–diethyl–amino–titanium, and tetrakis–ethylmethyl–amino–titanium, and NH 3 molecules as the reactant have been used. The resistivity of the resulting films was >600 μΩ cm and sometimes as high as ~7000 μΩ cm due to the significant unwanted carbon contamination (20–45 at.%).…”