Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

Aissa, K. Ait; Achour, Amine; Camus, J.; Brizoual, L. Le; Jouan, Pierre-Yves; Djouadi, M.A.

doi:10.1016/j.tsf.2013.11.073

Cited by 84 publications

(64 citation statements)

References 31 publications

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“…61 However, a lower lattice parameter has already been reported for VN thin films prepared by D.C. sputtering and could be explained by a compressive stress related to the deposition conditions. 62,63 Representative SEM images of VN thin films are shown in Figure 2. The VN film exhibits columnar growth on the glass substrate ( Figure 2a) with an average column diameter of 20 nm (Figure 2b).…”

Section: Resultsmentioning

confidence: 99%

Suitable Conditions for the Use of Vanadium Nitride as an Electrode for Electrochemical Capacitor

Morel

Borjon-Piron

Porto

et al. 2016

J. Electrochem. Soc.

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Vanadium nitride has displayed many interesting characteristics for its use as a pseudocapacitive electrode in an electrochemical capacitor, such as good electronic conductivity, good thermal stability, high density and high specific capacitance. Thin films of VN were prepared by D.C. reactive magnetron sputtering. The electrochemical stability of the films as well as the influence of dissolved oxygen in 1 M KOH electrolyte were investigated. In order to avoid material as well as electrolyte degradation, it was concluded that vanadium nitride should only be cycled between −0.4 and −1.0 V vs. Hg/HgO. After a 24 hours stabilization period, the prepared VN thin film showed an initial capacitance of 19 mF.cm −2 and a capacity retention of 96% after 10000 cycles. Furthermore, dissolved oxygen in the electrolyte was demonstrated to cause self-discharge up to a potential above −0.4 V vs. Hg/HgO, where VN was shown to be unstable. Additionally, the presence of oxygen was shown to shift the open circuit potential of a VN electrode to about 0 V through self-discharge processes. Electrochemical capacitors are currently being developed to complement other energy storage or conversion systems such as batteries and fuel cells. In the past two decades, several electrode materials have been investigated. The mostly studied materials include carbons, 1-8 conducting polymers 9-12 as well as pseudocapacitive 13 transition metal oxides such as ruthenium dioxide 14-18 and manganese dioxide. [19][20][21][22][23][24] In the effort to improve the performance of electrochemical capacitors, a widely used approach has been to develop synthetic methods to develop nanomaterials that are believed to lead to increased energy density and higher rate capability. 14,23,[25][26][27][28] Another approach has been to investigate the charge storage properties of novel materials. Accordingly, several research groups considered materials such as MXenes 29,30 and transition metal nitrides. [31][32][33][34][35][36][37] In the latter class of compounds, molybdenum nitride was firstly investigated 32,33,35,38,39 and in the past decade a great deal of attention has focused on other nitrides with an intensive focus on vanadium nitride 37,40-58 as a consequence of the impressive capacitance of 1340 F.g −1 reported for nanosized VN particles in 1 M KOH. 58 Indeed, VN is an interesting electrode material due to this high reported specific capacitance coupled with its close to metallic electronic conductivity (1.18 S.m −1 ), 59 high density (6.13 g.cm −3 ) and high melting point (2619 K). 59The hypothesis proposed by Choi et al.58 to explain such a high specific capacitance of VN, is that, in addition to electrochemical double layer capacitance, successive fast reversible redox reactions are taking place, involving surface oxide groups and OH − ions from the electrolyte. This hypothesis was supported by the observation of surface oxide via ex-situ XPS 58 and FTIR 41,58 post cycling measurements.While most studies concentrated on new synthesis of VN with the goa...

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Section: Resultsmentioning

confidence: 99%

Suitable Conditions for the Use of Vanadium Nitride as an Electrode for Electrochemical Capacitor

Morel

Borjon-Piron

Porto

et al. 2016

J. Electrochem. Soc.

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“…Nevertheless, the lattice parameter and coefficient of thermal expansion (CTE) mismatches between AlN and Si(111) are as large as 27% and 49%, respectively, which would cause high-density defects in as-grown AlN films [4]. Additionally, AlN films grown by MOCVD or magnetron sputtering (MS) usually exhibit thick interfacial layer, poor surface morphology owing to serious interfacial reactions between films and substrates at high temperature, which greatly deteriorates the performance of electronic devices [3][4][5][6][7]. To solve these problems, AlN films grown on Si(110) substrates by pulsed laser deposition (PLD) have been deployed.…”

Section: Introductionmentioning

confidence: 99%

Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

et al. 2015

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“…1). This may be caused by an improvement in the crystalline quality of the AlN film upon a thickness increase from 400 to 600 nm [30,31].…”

Section: Resultsmentioning

confidence: 99%

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

et al. 2017

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Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

Cited by 84 publications

References 31 publications

Suitable Conditions for the Use of Vanadium Nitride as an Electrode for Electrochemical Capacitor

Suitable Conditions for the Use of Vanadium Nitride as an Electrode for Electrochemical Capacitor

Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

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