Comparison of the structural and optical properties of porous In0.08Ga0.92N thin films synthesized by electrochemical etching

Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route

“…In essence, beneficial effects brought by porous GaN [30][31][32][33] and porous In y Ga 1-y N [34][35] in the aspects of an enhancement in PL intensity, an improvement in internal quantum efficiency and light extraction efficiency, as well as a relaxation of compressive stress with decreased dislocation density have provoked considerable interest on formation of pore geometry in the quaternary Al x In y Ga 1-x-y N layer. Moreover, the aforementioned benefits of porous formation revealed significance of the porous III-nitrides semiconductors as templates for growth of subsequent overgrown layers.…”

Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires

“…The attractiveness of GaN NPFs resides in their significant strain relaxation , and enhanced surface Raman scattering . Comparing with their compact counterparts, GaN NPFs have demonstrated improved properties in diverse applications such as photoelectrochemical water splitting, − supercapacitors for energy storage, , light emitting diodes (LEDs), ,,− distributed Bragg reflectors, or mechanic removal of films from the substrate. , The research on NPFs is not limited to GaN: different materials such as nanoporous InGaN, − Si, carbon membranes, and WO 3 have demonstrated a great potential for photoelectrochemical water splitting ,, and photocatalytic fuel cells …”

Surface Alteration of Planar P-Type Gallium Nitride to Porous Structure Using 50 Hz Alternating Current-Assisted Photo-Electrochemical Etching Route

“…[6][7][8][9] As the interest has been largely dedicated to utilizing PEC etching for pore formation, garnering of aspects such as solid state physics, electrochemistry, and science is important, whereby the three aspects are closely related to determine the extent of which the semiconductors are being etched. 10 Massive studies on PEC etching of GaN have been particularly focused on either unintentionally or n-type doped GaN, [11][12][13][14] whereby similar focus has been also devoted to ternary In y Ga 1−y N, [15][16] as well as quaternary aluminum indium gallium nitride (Al x In y Ga 1−x−y N). 10,[17][18][19] Reason leading to preferred studies for both the unintentionally doped and n-type doped semiconductors was explained in term of physics for an upward band bending that happened at interface between the semiconductors and the etch solution.…”