Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel films

Murray, Christopher P.; Flannery, C.M.; Streiter, I.; Schulz, Stefan E.; Baklanov, Mikhaı̈l R.; Mogilnikov, K. P.; Himcinschi, Cameliu; Friedrich, M.; Zahn, Dietrich R. T.; Geßner, Thomas

doi:10.1016/s0167-9317(01)00589-5

Cited by 67 publications

(31 citation statements)

References 4 publications

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“…A similar behavior was observed for the hardness, where the values were reduced from 1.21 GPa for HMSQ film to 0.71 and 0.39 GPa for 10:90 and 20:80 PAMAM:HMSQ films, respectively. The results that increased porosity compromised the mechanical properties of the films agree well with the literature [20][21][22]. Nevertheless, higher elastic modulus and hardness were found for present samples compared to the literature values.…”

Section: The Mechanical Properties Of the Templated Filmssupporting

confidence: 91%

Structural, electrical and mechanical properties of templated silsesquioxane porous films

Wong

et al. 2005

Microelectronic Engineering

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Section: The Mechanical Properties Of the Templated Filmssupporting

confidence: 91%

Structural, electrical and mechanical properties of templated silsesquioxane porous films

Wong

et al. 2005

Microelectronic Engineering

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“…Further examples comprise the Young's modulus measurements of low-k films by the bulge test [12], elipsometric porosimetry [13], surface acoustic wave spectroscopy followed by the best fit between experimental and theoretical frequency-dependent velocity dispersion curves [14,15], or the first convincing measurement of Poisson's ratio of porous low-k layers using Brillouin light scattering [14]. Moreover, Paik et al [16] predicted recently the failure of Cu/low-k interconnects based on their FEM-aided analysis, Damayanti et al [17] employed bending and nanoscratch to determine elastic properties and adhesion of low-k films, while Xiao et al [18] advertised their characterization of elastic parameters by laser generated surface acoustic waves.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of carbon-doped low-k multilayer structure by nanoindentation

Fujikane

Nagao²,

Liu³

et al. 2008

Journal of Alloys and Compounds

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“…To further illustrate the unique position of nano-architected materials, Figure 3c compares the hollow alumina nanolattices to several other material systems whose porosity can be varied through processing: hyperbranched poly(amidoamine) conjugated silica (HBPCS) (RD 30-90%), 41 silica xerogel (RD 45-64%), 42 silica aerogel (RD 32-40%), 43 and polyimide aerogel with varying amounts of 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) in 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 the backbone of the polyimide (0% 6FDA RD 11-16%, 50% 6FDA RD 5.3-8.1%). 28 The dashed contour represents the same scaling as one shown in Figure 3b for nanolattices with relative densities between 1% and 10%.…”

mentioning

confidence: 99%

Enabling Simultaneous Extreme Ultra Low-k in Stiff, Resilient, and Thermally Stable Nano-Architected Materials

et al. 2017

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(GIST), Gwangju 61005, Korea † These authors have contributed equally to this work.Keywords: dielectric constant, low-k, nanolattice, porosity, Young's modulus. AbstractLow dielectric constant (low-k) materials have gained increasing popularity because of their critical role in developing faster, smaller, and higher performance devices. Their practical 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 use has been limited by the strong coupling between mechanical, thermal, and electrical properties of materials and their dielectric constant; low-k is usually attained by materials that are very porous, which results in high compliance, i.e. silica aerogels, 39 high dielectric loss, i.e.porous polycrystalline alumina, 25 and poor thermal stability, i.e. Sr-based metal-organic frameworks. 23 We report the fabrication of 3D nano-architected hollow-beam alumina dielectrics whose k is 1.06-1.10 at 1MHz that is stable over the voltage range of -20V to 20V and a frequency range of 100 kHz to 10 MHz. This dielectric material can be used in capacitors and is mechanically resilient, with a Young's modulus of 30 MPa, a yield strength of 1.07 MPa, a nearly full shape recoverability to its original size after >50% compressions, and outstanding thermal stability with a thermal coefficient of dielectric constant (TCK) of 2.43 × 10 -5 K -1 up to 800 °C. These results suggest that nano-architected materials may serve as viable candidates for ultra low-k materials that are simultaneously mechanically-resilient, and thermally and electrically stable for microelectronics and devices. Main TextDesigning and synthesizing low dielectric constant (low-k) materials has been a subject of intense research because of their potential use in high performance technological applications like computer processing, 1,2 wireless communications, [3][4][5][6] and automotive radar. 7 Lowering the k of the interlayer dielectric decreases the resistance-capacitance (RC) delay, lowers power consumption, and reduces cross-talk between nearby interconnects, all of which pose significant issues for modern integrated circuits (ICs). [8][9][10] The low-k property is also favored in low temperature co-fired ceramic (LTCC) technology and represents the backbone of Multi Chip Module (MCM) technology, which enables the integration of passive elements like inductors, 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 3 resistors, and capacitors, which serve as building blocks for 3D circuits for the microwave/millimeter communications industry. [11][12] For example, the antenna in a typical RF module for radiating/receiving radio waves, requires the supporting substrate whose k is sufficiently low to preven...

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Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel films

Cited by 67 publications

References 4 publications

Structural, electrical and mechanical properties of templated silsesquioxane porous films

Structural, electrical and mechanical properties of templated silsesquioxane porous films

Evaluation of carbon-doped low-k multilayer structure by nanoindentation

Enabling Simultaneous Extreme Ultra Low-k in Stiff, Resilient, and Thermally Stable Nano-Architected Materials

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