Comparison of single event transients generated at four pulsed-laser test facilities - NRL, IMS, EADS, JPL

Buchner,; Warner,; McMorrow,; Miller, '; Morand, Sergé; Pouget,; Larue,; Adell,; Allen, Theodore T.

doi:10.1109/radecs.2011.6131349

Cited by 6 publications

(6 citation statements)

References 3 publications

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“…This is mainly because of the longer laser wavelengths we used. In addition, previous studies have compared the experimental results on a basic component (a single diode) from several mainstream laser facilities and have found that different laser characteristics tend to affect the transient amplitudes and charge collection [4]. The results from our experiments may not be directly applied to other laser facilities.…”

Section: Analyses and Discussionmentioning

confidence: 93%

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller

et al. 2013

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Pulsed laser and heavy-ion experiments were carried out on a commercial-off-the-shelf DC/DC pulse width modulation controller to study the equivalent laser Linear Energy Transfer (LET) at wavelengths of 750 nm, 800 nm, 850 nm and 920 nm. The laser experiments showed that the shorter wavelength laser has smaller threshold energy to generate single-event transient pulses. The cross-sections versus heavy-ion LET and laser energy per pulse were obtained and correlated. The heavy-ion and laser cross-sections fit well considering the effects of metal layers on the chip. The results of this research facilitate the future pulsed laser testing by providing explicit coefficients to evaluate the equivalent laser LET, which can be used to replace costly heavy-ion testing.

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Section: Analyses and Discussionmentioning

confidence: 93%

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller

et al. 2013

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“…Therefore, it is possible the generation of soft events in microelectronic devices for radiation hardness test purposes, obtaining similar results to those produced by heavy ions with LET 10 MeV cm 2 /mg, without damaging the sample with total dose effects and with the advantage to select the precise instant and the place where the event is produced. Charge collection at 12V bias as a function of corrected laser energy (data for EADS; IMS, JPL and NRL have been obtained from [12]). …”

Section: Discussionmentioning

confidence: 99%

“…This is consistent with the fact that due to differences in λ, the light from EADS/IMS lasers is weakly absorbed and much of their energy is deposited beyond the depletion layer of the diode. NRL, JPL, EADS and IMS data were obtained from [12].…”

Section: A Signal Amplitude Vs Pulse Energymentioning

confidence: 99%

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Single event transients generation in silicon devices with pulsed laser

Paul

Bandi

Segura

et al. 2015

2015 10th Spanish Conference on Electron Devices (CDE)

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We perform a comparative study of the characteristics and capabilities of a pulsed laser system that emulates single event injection available at the UIB with respect to similar pulsed laser test facilities in Europe (EADS, IMS) and the United States (JPL, NRL). A series of experimental measurements were taken on a silicon photodiode (Centronic OSD15-5T) used in a previous comparative study conducted by the mentioned centers.

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“…Currently, all over the world a dozen of research centers are steadily working using laser methods to study the SEEs, among which the mostly known are: Naval Research Laboratory (USA); EADS (European Aeronautic Defense and Space Company, France); IMS Laboratory (Nanoelectronics Group, CNRS, IPB, University of Bordeaux, France); Aerospace Corporation (USA); JPL/NASA (USA) 3 .…”

Section: The Prerequisites For the Basic Approach To Laser Test Toolsmentioning

confidence: 99%

Ultrashort pulsed laser tools for testing of semiconductor elements hardness to single event effects, caused by cosmic heavy charged particles

et al. 2015

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The installations for laser testing of microelectronic elements (first of all -integrated circuits) of devices for space applications for hardness to local radiation effects from heavy charged particles are presented. The possibility of a focused pulsed laser radiation application to the study of local radiation effects, caused by single heavy charged particles, is explained. The fundamentals of an approach to the construction of test sets, based on the picosecond and femtosecond lasers and systems for focusing their radiation, are considered. The main technical requirements for the basic modules of sets for laser testing (laser wavelength and pulse duration and repetition rate, spatial beam parameters and minimal spot size, speed of object movement and so on) are substantiated. All worked out sets have a full-featured software for the operational management of all modules of the laser test facility, including the positioning of the object, to provide feedback from the measurement results of the reaction of the object on the laser excitation. The parameters of developed laser hardware and software systems and their foreign counterparts are compared. Further improvement directions for laser testing tools are briefly outlined. The discussion is also presented of described hardware technical and operational characteristics, allowing to use it for a variety of scientific research studies, requiring selective (with submicron spatial resolution) object excitation by ultrashort laser pulses and recording responses to this effect with the exact timing of the moment of excitation, as well as to perform a variety of high precision technological operations.

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Comparison of single event transients generated at four pulsed-laser test facilities - NRL, IMS, EADS, JPL

Cited by 6 publications

References 3 publications

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller

Single event transients generation in silicon devices with pulsed laser

Ultrashort pulsed laser tools for testing of semiconductor elements hardness to single event effects, caused by cosmic heavy charged particles

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