Comparison of noise properties of different magnetic-field semiconductor integrated sensors

Chovet, A.; Roumenin, Chavdar; Dimopoulos, Georgina; Mathieu, N.

doi:10.1016/0924-4247(89)80079-2

Cited by 28 publications

(4 citation statements)

References 8 publications

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“…The frequency spectrum of the GA is shown in Fig. 4 In comparison with similar works, at [14] CMOS Magfets are used as the sensing element which eliminates the need for instrumentation amplifiers and a cascode stage amplifies the deflected current due to magnetic field; however, minimum detectable magnetic field in CMOS Magfets is higher than CMOS Hall sensors [22]. Therefore, by using CMOS Hall sensors better detection of the magnetic field will be achieved.…”

Section: A Overviewmentioning

confidence: 99%

A Galvanic Isolated Amplifier Based on CMOS Integrated Hall-Effect Sensors

Mirfakhraei

Audet

Hassan

2021

IEEE Trans. Circuits Syst. I

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Section: A Overviewmentioning

confidence: 99%

A Galvanic Isolated Amplifier Based on CMOS Integrated Hall-Effect Sensors

Mirfakhraei

Audet

Hassan

2021

IEEE Trans. Circuits Syst. I

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“…In [10], a MAGFET is used as a signal receiver. Despite the design simplicity in the receiver circuitry, MAGFETs suffer from a lower limit of detection than Hall sensors [13]. On the other hand, a CMOS Hall effect sensor in [11] receives the signaldependent magnetic field ranging from DC to the bandwidth of interest.…”

Section: Introductionmentioning

confidence: 99%

A Fully Integrated Low-Power Hall-Based Isolation Amplifier With IMR Greater Than 120 dB

Mirfakhraei

Audet

Hassan

2022

IEEE Trans. Circuits Syst. I

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A CMOS Hall-based fully integrated isolation amplifier for differential voltage sensing is presented in this work. The design is fabricated in a 0.35 µm CMOS process in which the high voltage (HV) side of the amplifier contains a coil driver while the low voltage (LV) side includes a Hall-effect sensor, lownoise amplifier, programmable-gain amplifier, filter, and chopper switches. Another Hall sensor performs the digital isolation using the on-off keying (OOK) technique for clock recovery. The introduced prototype achieves above 120 dB of isolation mode rejection (IMR) at 60 Hz and operates at a continuous isolation working voltage of 0.6 kV. It has also a maximum nonlinearity of 0.64 %, an input-referred offset of 1 mV, a 40 dB full-scale signal-to-noise ratio over a 40 kHz bandwidth, and a spurious-free dynamic range of 64 dB. The silicon area for each of the two separate dices employed for the HV and LV side of the isolation amplifier is 1 mm 2 with a power consumption of 7.6 mW and 9.9 mW respectively. The achieved miniaturized size of the isolation components, as well as their significantly low-power consumption, ensure the suitability of the proposed isolation amplifier for multi-channel readout circuit applications.

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“…In the presence of magnetic fields applied perpendicular to the device surface, the charged carriers are deflected as a consequence of the Lorentz force leading to unequal current flow at the split contacts (see figure 3). The silicon split-current magnetic sensors have been studied previously [8][9][10][11][12]. The relative sensitivity of the double-drain sensors is calculated by [13]:…”

Section: Introductionmentioning

confidence: 99%

Analysis of GaN MagHEMTs

Faramehr

Janković

Igić

2018

Semicond. Sci. Technol.

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The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T −1 . We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r =6.78%T −1 ) and 500K (S r =4.91%T −1 ) compared to the sensitivity measured at 300 K (S r =11.98%T −1 ). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T −1 to 23.29%T −1 using the commercial simulation toolbox Atlas, by Silvaco.

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Comparison of noise properties of different magnetic-field semiconductor integrated sensors

Cited by 28 publications

References 8 publications

A Galvanic Isolated Amplifier Based on CMOS Integrated Hall-Effect Sensors

A Galvanic Isolated Amplifier Based on CMOS Integrated Hall-Effect Sensors

A Fully Integrated Low-Power Hall-Based Isolation Amplifier With IMR Greater Than 120 dB

Analysis of GaN MagHEMTs

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