Comparison of NiO_xthin film deposited by spin-coating or thermal evaporation for application as a hole transport layer of perovskite solar cells

Abstract

We compared nickel oxide (NiOx) deposited by thermal evaporation and that deposited by the spin-coating process, for use in the hole transport layers of inverted planar perovskite solar cells (PSCs).

Inverted perovskite/silicon V-shaped tandem solar cells with 27.6% efficiency via self-assembled monolayer-modified nickel oxide layer

“…When the perovskite precursor was dropped on the NiO x /SAM HTL, the contact angle significantly decreased to 11.1°, since the rough morphology and exposed NiOOH on the spin-coated NiO x film surface can provide sufficient wettability for the perovskite precursor. 54 The larger grain growth resistance on the hydrophilic NiO x HTL leads to a smaller average grain size of 178 nm (Fig. S5†) than the that on the bare IWO substrate (Fig.…”

Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural, Optical, and Electrical Properties

“…It is known that in its stoichiometric form, NiO is an insulator. NiO material, obtained by different methods, is a metal-deficient p-type semiconductor; therefore, Ni vacancies are present at the cation lattice site [ 9 ]. Due to Ni vacancies, some Ni 2+ ions must be converted to Ni 3+ ions in order to maintain the electrical neutrality in the structure [ 9 ].…”

“…NiO material, obtained by different methods, is a metal-deficient p-type semiconductor; therefore, Ni vacancies are present at the cation lattice site [ 9 ]. Due to Ni vacancies, some Ni 2+ ions must be converted to Ni 3+ ions in order to maintain the electrical neutrality in the structure [ 9 ]. The Ni 2+ deficiency, Ni 3+ presence, and oxygen-rich nature directly contribute to the p-type conductivity of the NiO x film [ 53 ].…”

“…Due to these unique properties, NiO x thin films become multipurpose materials in various applications such as electrochromic (EC) applications [ 4 ]. NiO manifests high optical contrast, fast switching times, good cycling, and anodic coloration, which is very promising for a counter electrode layer in complementary EC devices [ 5 , 6 , 7 ], supercapacitors [ 8 ], as a hole transport layer of perovskite solar cells [ 9 ], highly sensitive gas sensors [ 2 ], transparent conducting oxides, spin-valve giant magnetoresistive sensors, chemical sensor applications, Schottky diodes, and metal oxide field-effect transistors (MOSFETs) [ 10 ].…”

Highly flexible Ag nanowire network covered by a graphene oxide nanosheet for high-performance flexible electronics and anti-bacterial applications

“…An AgNWs film with an irregularly connected network has been applied in flexible electronics and wearable devices due to its high conductivity, low sheet resistance, good flexibility and simple solution-based coating process [44][45][46]. It is possible to produce a cost-effective AgNWs FTCE because it can be printed by spin coating [47,48], bar coating [49], slot die coating [7,50], brush painting [51], and spray coating [52] at room temperature. However, a reduction in the AgNW concentration in ink for the purpose of confirming high transmittance resulted in a reduction in the inter-link connectivity of the AgNWs and increased the sheet resistance.…”