2001
DOI: 10.1016/s0168-9002(01)00826-9
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Comparison of hybrid pixel detectors with Si and GaAs sensors

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Cited by 12 publications
(7 citation statements)
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“…Schottky sensors are ordinarily made from bulkgrown i-GaAs [1,7,10,16,[31][32][33][34][35][36][37][38][39][40]. Wafers are lapped to a required thickness and polished, and the disturbed layer is then removed by wet etching.…”
Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning
confidence: 99%
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“…Schottky sensors are ordinarily made from bulkgrown i-GaAs [1,7,10,16,[31][32][33][34][35][36][37][38][39][40]. Wafers are lapped to a required thickness and polished, and the disturbed layer is then removed by wet etching.…”
Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning
confidence: 99%
“…With Ti/Pt/Au contacts, a way to suppress the injection is to form a disturbed layer in which hole recombination will occur [1,31,34,35]. Such a layer is located just beneath the contact and is produced by oxygen implantation without postannealing, preparatory to metallizing.…”
Section: Fabrication Technology For the Sensing Portion Of A Hybrid Dmentioning
confidence: 99%
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“…This is not acceptable in low-dose medical imaging applications or hard X-ray and γ-ray astronomy. Thus, high Z-materials like GaAs (Z=31/33) were studied [9]- [11] and a very promising material for high absorption sensors is CdTe (Z=48/52). The absorption efficiency of an only 0.5mm thick CdTe sensor is 90% and 30% for X-ray energies of 40…”
mentioning
confidence: 99%