Comparison of high-κ Nd2O3 and NdTiO3 dielectrics deposited on polycrystalline silicon substrates

Kao, Chiang; Chen, Hsiang; Liao, Y. C.; Deng, Jin Zhou; Chu, Yu Cheng; Chen, Yun Ti; Chang, Hung Wei

doi:10.1016/j.tsf.2014.03.017

Cited by 10 publications

(3 citation statements)

References 14 publications

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“…Moreover, the film morphology may evolve from an amorphous configuration to polycrystalline at lower annealing temperature (700°C), and eventually to a more crystalline configuration at higher annealing temperature (900°C). 27 Due to the lower packing density with higher crystallinity, 28,29 the decrease in refractive index is expected. This trend was also observed for Er 2 O 3 21 films after high-temperature heat treatment.…”

Section: Determination Of Refractive Index (N) and Extinction Coefficient (K)mentioning

confidence: 99%

Observation of Optical Properties of Neodymium Oxide with Spectroscopic Ellipsometry

Fan

Liu

Fei

et al. 2015

Journal of Elec Materi

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The annealing dependence of the optical properties of Nd 2 O 3 films deposited by atomic layer deposition has been investigated by variable-angle spectroscopic ellipsometry (VASE). Based on VASE measurements, it is found that the refractive index and high-frequency dielectric constant decrease with increasing annealing temperature. The optical bandgap energy extracted using the Cody method varies from 4.13 eV for the as-grown state to 4.78 eV for the film annealed at 900°C. Moreover, three proposed physical models with corresponding optical models are applied to fit the experimental data to understand the possible structural change of the films with annealing temperature. Fitting results indicate that the interfacial interaction between the substrate and the film bulk occurs during the postdeposition annealing procedure and the surface properties of the Nd 2 O 3 films are improved after annealing at 900°C. It is shown that the extracted VASE parameters well represented the characteristics of Nd 2 O 3 /SiO 2 /Si stacks with different annealing temperatures.

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Section: Determination Of Refractive Index (N) and Extinction Coefficient (K)mentioning

confidence: 99%

Observation of Optical Properties of Neodymium Oxide with Spectroscopic Ellipsometry

Fan

Liu

Fei

et al. 2015

Journal of Elec Materi

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“…For the rare earth titanate compounds of RE 2 TiO 5 stoichiometry, a variety of structures and chemistries exist. A range of applications for these compounds have been studied including burnable poisons [9,10], containment matrices for immobilisation of high-level nuclear waste [11][12][13][14][15][16], lithium ion and sodium ion batteries [17], and electronic and ionic conductivity [18][19][20]. Application-based studies on RE 2 ZrO 5 and RE 2 SnO 5 compositions are almost nonexistent although there has been some interest in the zirconates for nuclear-based use, e.g.…”

Section: Introductionmentioning

confidence: 99%

The ion irradiation tolerance of the fluorite RE2MO5 (RE = Sm, and Yb, M = Ti, Zr, and Sn) system

Aughterson

Newman²,

Ionescu

et al. 2021

J Aust Ceram Soc

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In the search for novel ceramics for use within nuclear fuel-related applications and nuclear waste-form matrices, a major focus has been on the development of radiation-tolerant materials. Of particular interest in this field have been numerous compounds with either pyrochlore or the related fluorite-type structures. In this study, we look to expand the family of compounds with defect fluorite-type structure. We have fabricated three new compounds; Yb 2 Sn 1.125 O 5.25 , Yb 2 Sn 1.25 O 5.5 , and Yb 2 Sn 1.375 O 5.75 . The compound Yb 2 Sn 1.125 O 5.25 was determined, via x-ray diffraction, to have the long-range defect fluorite structure, Fm-3 m symmetry, with cell parameter a = 5.17233(1). Further to this, Sm 2 ZrO 5 and Yb 2 TiO 5 compounds were also fabricated and crystal structures characterised. The use of transmission electron microscopy has revealed a much more complex crystal structure than that of the relatively high symmetry fluorite, with the presence of structural modulations being detected. The ion-irradiation response of these compounds was tested via bulk specimen irradiation using 15-MeV gold ions with grazing incidence x-ray diffraction characterisation. The results show that both Sm 2 ZrO 5 and Yb 2 Sn 1.25 O 5.5 are highly tolerant to ion-irradiation exposure whilst Yb 2 TiO 5 is susceptible to amorphisation.

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“…Based on previous reports, interdielectric polyoxide substrates incorporated in thin film transistors have been used to replace the common single-crystal Si substrate because the polyoxide substrate may display low conductivity, high breakdown, and highcharge-to breakdown properties [7]. Recently, Ta 2 O 5 and Nd 2 O 3 have been demonstrated as high-quality dielectrics [7,8]. However, NdTaO 4 dielectrics, which can be incorporated from Ta 2 O 5 and Nd 2 O 3 , have not been proposed, yet.…”

Section: Introductionmentioning

confidence: 99%

High-κ NdTaO4 dielectrics deposited on polycrystalline silicon substrates

Kao

Lin

et al. 2015

J Mater Sci: Mater Electron

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High-k NdTaO 4 dielectrics annealed with various temperatures were first deposited on polycrystalline silicon substrates. Material and electrical characterizations were performed. To examine the crystalline structures, X-ray diffraction patterns were analyzed. Electrical measurements including current-voltage characteristics, constant current stress, and the Weibull plots show that annealing could enhance the breakdown voltages, lower the trapping rate, and strengthen the reliability. Results indicate that annealing at 900°C may optimize the dielectric performance. This dielectric shows promise for future gate material or flash memory integrated with current NdTaO 4 -based optical devices.

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Comparison of high-κ Nd2O3 and NdTiO3 dielectrics deposited on polycrystalline silicon substrates

Cited by 10 publications

References 14 publications

Observation of Optical Properties of Neodymium Oxide with Spectroscopic Ellipsometry

Observation of Optical Properties of Neodymium Oxide with Spectroscopic Ellipsometry

The ion irradiation tolerance of the fluorite RE2MO5 (RE = Sm, and Yb, M = Ti, Zr, and Sn) system

High-κ NdTaO4 dielectrics deposited on polycrystalline silicon substrates

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